NTTFS6H860NLTAG
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onsemi NTTFS6H860NLTAG

Manufacturer No:
NTTFS6H860NLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 8.1A/30A 8WDFN
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The onsemi NTTFS6H860NLTAG is a high-performance, single N-Channel power MOSFET designed to offer superior reliability and efficiency. This device is part of onsemi's T6 Series, which features the advanced Shielded Gate Trench Technology. This technology enhances the MOSFET's ruggedness and performance, making it suitable for a wide range of applications that require low on-resistance and high switching performance.

Key Specifications

ParameterValue
Voltage (V)80 V
On-State Resistance (Rds(on))20 mΩ
Continuous Drain Current (Id)30 A
PackageSO8-FL, Power-Clip, Dual-Cool

Key Features

  • Advanced Shielded Gate Trench Technology for superior reliability and performance.
  • Low on-resistance (Rds(on)) of 20 mΩ.
  • High continuous drain current (Id) of 30 A.
  • Multiple package options including SO8-FL, Power-Clip, and Dual-Cool packages.
  • Optimized for minimal on-state resistance and superior switching performance.

Applications

  • 5G Base Stations
  • Network Systems
  • Cloud Computing
  • Power Tools
  • Other high-power applications requiring efficient and reliable MOSFETs.

Q & A

  1. What is the voltage rating of the NTTFS6H860NLTAG MOSFET?
    The voltage rating of the NTTFS6H860NLTAG MOSFET is 80 V.
  2. What is the on-state resistance (Rds(on)) of this MOSFET?
    The on-state resistance (Rds(on)) is 20 mΩ.
  3. What is the continuous drain current (Id) of this MOSFET?
    The continuous drain current (Id) is 30 A.
  4. What technology does the NTTFS6H860NLTAG MOSFET use?
    The NTTFS6H860NLTAG MOSFET uses onsemi’s advanced Shielded Gate Trench Technology.
  5. In what packages is the NTTFS6H860NLTAG available?
    The NTTFS6H860NLTAG is available in SO8-FL, Power-Clip, and Dual-Cool packages.
  6. What are some typical applications for this MOSFET?
    Typical applications include 5G Base Stations, Network Systems, Cloud Computing, Power Tools, and other high-power applications.
  7. Why is the Shielded Gate Trench Technology important?
    The Shielded Gate Trench Technology enhances the MOSFET’s ruggedness and performance, providing superior reliability and efficiency.
  8. How does the multiple package option benefit designers?
    The multiple package options allow designers to scale performance up or down across a portfolio of end products with little redesign effort.
  9. Where can I find detailed specifications for the NTTFS6H860NLTAG?
    Detailed specifications can be found in the datasheet available on onsemi’s official website and other authorized distributors like Digi-Key and RichardsonRFPD.
  10. What are the benefits of low on-state resistance in a MOSFET?
    Low on-state resistance reduces power losses and improves overall system efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:8.1A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:610 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 42W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number NTTFS6H860NLTAG NTTFS6H880NLTAG NTTFS6H850NLTAG
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 8.1A (Ta), 30A (Tc) 6.6A (Ta), 22A (Tc) 14.8A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 5A, 10V 29mOhm @ 5A, 10V 8.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2V @ 30µA 2V @ 20µA 2V @ 70µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 9 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 610 pF @ 40 V 431 pF @ 40 V 1450 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 3.1W (Ta), 42W (Tc) 3.1W (Ta), 33W (Tc) 3.9W (Ta), 73W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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