NTTFS5116PLTAG
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onsemi NTTFS5116PLTAG

Manufacturer No:
NTTFS5116PLTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 5.7A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The onsemi NTTFS5116PLTAG is a P-Channel MOSFET designed for low to medium voltage applications. This device is part of onsemi's TRENCH FET LEGACY series, known for its high performance and reliability. The NTTFS5116PLTAG is housed in an 8-pin WDFN (3.3x3.3 mm) surface mount package, making it suitable for a variety of compact electronic designs.

Key Specifications

ParameterValue
Voltage Rating (Vds)-60 V
Continuous Drain Current (Id)5.7 A (Ta), 14 A (Tc)
On-Resistance (Rds(on))52 mΩ @ 6 A, 10 V
Power Dissipation (Pd)3.2 W (Ta), 20 W (Tc)
Threshold Voltage (Vth)3 V @ 250 μA
Package Type8-WDFN (3.3x3.3 mm)

Key Features

  • Low on-resistance (Rds(on)) of 52 mΩ @ 6 A, 10 V, enhancing efficiency in power management applications.
  • High continuous drain current of 5.7 A (Ta) and 14 A (Tc), suitable for demanding power switching tasks.
  • Compact 8-WDFN (3.3x3.3 mm) surface mount package, ideal for space-constrained designs.
  • TRENCH FET LEGACY technology for improved performance and reliability.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The onsemi NTTFS5116PLTAG is versatile and can be used in a variety of applications, including:

  • Power management systems, such as DC-DC converters and power supplies.
  • Motor control and drive systems.
  • Audio and video equipment.
  • Automotive electronics, such as infotainment and body control modules.
  • Industrial control systems and automation.

Q & A

  1. What is the voltage rating of the NTTFS5116PLTAG MOSFET?
    The voltage rating (Vds) of the NTTFS5116PLTAG is -60 V.
  2. What is the continuous drain current of the NTTFS5116PLTAG?
    The continuous drain current (Id) is 5.7 A (Ta) and 14 A (Tc).
  3. What is the on-resistance (Rds(on)) of the NTTFS5116PLTAG?
    The on-resistance (Rds(on)) is 52 mΩ @ 6 A, 10 V.
  4. What is the power dissipation (Pd) of the NTTFS5116PLTAG?
    The power dissipation (Pd) is 3.2 W (Ta) and 20 W (Tc).
  5. What is the threshold voltage (Vth) of the NTTFS5116PLTAG?
    The threshold voltage (Vth) is 3 V @ 250 μA.
  6. What package type does the NTTFS5116PLTAG use?
    The NTTFS5116PLTAG is housed in an 8-WDFN (3.3x3.3 mm) surface mount package.
  7. Is the NTTFS5116PLTAG RoHS compliant?
    Yes, the NTTFS5116PLTAG is RoHS compliant.
  8. What technology does the NTTFS5116PLTAG use?
    The NTTFS5116PLTAG uses TRENCH FET LEGACY technology.
  9. What are some common applications for the NTTFS5116PLTAG?
    The NTTFS5116PLTAG is commonly used in power management systems, motor control, audio and video equipment, automotive electronics, and industrial control systems.
  10. Where can I find detailed specifications for the NTTFS5116PLTAG?
    Detailed specifications can be found in the datasheet available on the onsemi website, Digi-Key, LCSC, and other authorized distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:52mOhm @ 6A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:25 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1258 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NTTFS5116PLTWG
NTTFS5116PLTWG
MOSFET P-CH 60V 5.7A 8WDFN

Similar Products

Part Number NTTFS5116PLTAG NTTFS5116PLTWG
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta) 5.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 52mOhm @ 6A, 10V 52mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V 25 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1258 pF @ 30 V 1258 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 40W (Tc) 3.2W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN

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