NTTFS4928NTAG
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onsemi NTTFS4928NTAG

Manufacturer No:
NTTFS4928NTAG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 7.3A/37A 8WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTTFS4928NTAG is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for a wide range of applications requiring high current handling and low on-resistance. The MOSFET features a 30V drain-to-source voltage rating and continuous drain current of 7.3A at ambient temperature and 37A at case temperature, making it suitable for power management and switching applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 7.3 A
Continuous Drain Current (Id) @ Case Temperature 37 A
On-Resistance (Rds(on)) @ 10V 9
Package / Case 8-WDFN Exposed Pad
Power Dissipation (Pd) @ Ambient Temperature 810 mW
Power Dissipation (Pd) @ Case Temperature 20.8 W
Threshold Voltage (Vth) 1.2 V @ 250μA

Key Features

  • High current handling capability with continuous drain current of 7.3A at ambient temperature and 37A at case temperature.
  • Low on-resistance of 9mΩ at 10V, reducing power losses in switching applications.
  • Compact 8-WDFN exposed pad package, suitable for space-constrained designs.
  • High power dissipation of up to 20.8W at case temperature, ensuring reliable operation in demanding environments.
  • Threshold voltage of 1.2V at 250μA, providing a clear switching threshold.

Applications

  • Power management systems, including DC-DC converters and power supplies.
  • Switching applications such as motor control, lighting, and industrial automation.
  • Battery management systems and electric vehicles.
  • Aerospace and defense systems requiring high reliability and performance.

Q & A

  1. What is the drain-to-source voltage rating of the NTTFS4928NTAG MOSFET?

    The drain-to-source voltage rating is 30V.

  2. What is the continuous drain current at ambient temperature?

    The continuous drain current at ambient temperature is 7.3A.

  3. What is the on-resistance of the MOSFET at 10V?

    The on-resistance is 9mΩ at 10V.

  4. What is the package type of the NTTFS4928NTAG?

    The package type is 8-WDFN exposed pad.

  5. What is the power dissipation at case temperature?

    The power dissipation at case temperature is up to 20.8W.

  6. What is the threshold voltage of the MOSFET?

    The threshold voltage is 1.2V at 250μA.

  7. In what types of applications is the NTTFS4928NTAG commonly used?

    It is commonly used in power management systems, switching applications, battery management systems, and aerospace and defense systems.

  8. Is the NTTFS4928NTAG RoHS compliant?

    Yes, the NTTFS4928NTAG is RoHS compliant.

  9. What is the typical use case for the high current handling capability of this MOSFET?

    The high current handling capability is typically used in applications such as motor control and high-power switching.

  10. Where can I find detailed specifications and datasheets for the NTTFS4928NTAG?

    Detailed specifications and datasheets can be found on the official onsemi website, as well as through distributors like Mouser, Digi-Key, and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.3A (Ta), 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:913 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):810mW (Ta), 20.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-WDFN (3.3x3.3)
Package / Case:8-PowerWDFN
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Same Series
NTTFS4928NTWG
NTTFS4928NTWG
MOSFET N-CH 30V 7.3A/37A 8WDFN

Similar Products

Part Number NTTFS4928NTAG NTTFS4928NTWG NTTFS4929NTAG
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 7.3A (Ta), 37A (Tc) 7.3A (Ta), 37A (Tc) 6.6A (Ta), 34A(Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 20A, 10V 9mOhm @ 20A, 10V 11mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 8 nC @ 4.5 V 8.8 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 913 pF @ 15 V 913 pF @ 15 V 920 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 810mW (Ta), 20.8W (Tc) 810mW (Ta), 20.8W (Tc) 810mW (Ta), 22.3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3) 8-WDFN (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN 8-PowerWDFN

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