Overview
The NTTFS008P03P8Z is a high-performance P-Channel MOSFET transistor manufactured by onsemi. This device is designed for high-current and high-voltage applications, offering excellent thermal conduction and space-saving design. The MOSFET features an ultra-low on-resistance (RDS(on)) to improve system efficiency and is packaged in an 8-PQFN (3.3x3.3mm) surface mount package. It is RoHS compliant and free from lead, halogen, and BFR (Brominated Flame Retardants), making it suitable for a wide range of applications where environmental compliance is crucial.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Type | P-Channel | |
| Maximum Drain Source Voltage | 30 V | V |
| Maximum Continuous Drain Current | 22 A (Ta), 96 A (Tc) | A |
| Maximum Drain Source Resistance | 3.8 mΩ @ 18 A, 10 V | Ω |
| Maximum Gate Threshold Voltage | 3 V @ 250 µA | V |
| Maximum Junction Temperature | 150°C (TJ) | °C |
| Maximum Power Dissipation | 2.36 W (Ta), 50 W (Tc) | W |
| Maximum Pulse Drain Current | 418 A | A |
| Maximum Total Gate Charge | 134 nC | nC |
| Gate to Source Voltage | ±25 V | V |
| Package Type | 8-PQFN (3.3x3.3mm) | |
| Mounting Type | Surface Mount | |
| Junction to Case Thermal Resistance | 2.5 °C/W | °C/W |
Key Features
- Ultra Low RDS(on): Improves system efficiency with a very low on-resistance.
- Advanced Package Technology: The 8-PQFN package provides excellent thermal conduction and space-saving design.
- Environmental Compliance: Pb-free, halogen-free, and BFR-free, making it RoHS compliant.
- High Current and Voltage Handling: Capable of handling up to 96 A of continuous drain current and 30 V of drain-source voltage.
- Low Gate Threshold Voltage: With a maximum gate threshold voltage of 3 V, it is suitable for a variety of gate drive voltages.
Applications
- Power Load Switch: Ideal for applications requiring high current switching.
- Protection Circuits: Suitable for reverse current, over voltage, and reverse negative voltage protection.
- Battery Management: Used in battery management systems for efficient power handling.
Q & A
- What is the maximum drain-source voltage of the NTTFS008P03P8Z MOSFET?
The maximum drain-source voltage is 30 V.
- What is the maximum continuous drain current of the NTTFS008P03P8Z?
The maximum continuous drain current is 22 A at ambient temperature (Ta) and 96 A at case temperature (Tc).
- What is the package type of the NTTFS008P03P8Z?
The package type is 8-PQFN (3.3x3.3mm) surface mount.
- Is the NTTFS008P03P8Z RoHS compliant?
Yes, it is RoHS compliant and free from lead, halogen, and BFR.
- What is the maximum junction temperature of the NTTFS008P03P8Z?
The maximum junction temperature is 150°C (TJ).
- What are the typical applications of the NTTFS008P03P8Z?
Typical applications include power load switch, protection circuits, and battery management.
- What is the maximum gate threshold voltage of the NTTFS008P03P8Z?
The maximum gate threshold voltage is 3 V at 250 µA.
- What is the junction to case thermal resistance of the NTTFS008P03P8Z?
The junction to case thermal resistance is 2.5 °C/W.
- What is the maximum pulse drain current of the NTTFS008P03P8Z?
The maximum pulse drain current is 418 A.
- What is the maximum total gate charge of the NTTFS008P03P8Z?
The maximum total gate charge is 134 nC.
