Overview
The NTP082N65S3F is a high-voltage, N-Channel power MOSFET from ON Semiconductor, part of their SUPERFET III family. This device utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates, making it highly suitable for various power systems requiring miniaturization and higher efficiency.
Key Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | - | - | 650 | V |
| Gate to Source Voltage | VGSS | - | - | ±30 | V |
| Continuous Drain Current | ID | - | - | 40 | A (at TC = 25°C) |
| Pulsed Drain Current | IDM | - | - | 100 | A |
| Static Drain to Source On Resistance | RDS(on) | - | 70 | 82 | mΩ (at VGS = 10 V, ID = 20 A) |
| Gate Threshold Voltage | VGS(th) | 3.0 | - | 5.0 | V |
| Total Gate Charge | Qg(tot) | - | 81 | - | nC (at VDS = 400 V, ID = 20 A, VGS = 10 V) |
| Thermal Resistance, Junction to Case | RθJC | - | - | 0.4 | °C/W |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 62.5 | °C/W |
Key Features
- High Voltage Capability: 650 V drain to source voltage at TJ = 25°C and 700 V at TJ = 150°C.
- Low On-Resistance: Typical RDS(on) of 70 mΩ at VGS = 10 V, ID = 20 A.
- Ultra Low Gate Charge: Typical total gate charge (Qg) of 81 nC.
- Low Effective Output Capacitance: Typical Coss(eff.) of 722 pF.
- 100% Avalanche Tested: Ensures robustness against avalanche conditions.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- Optimized Reverse Recovery Performance: Reduces the need for additional components and improves system reliability.
Applications
- Telecom / Server Power Supplies: Suitable for high-efficiency power supply designs.
- Industrial Power Supplies: Ideal for industrial power systems requiring high reliability and efficiency.
- EV Charger: Used in electric vehicle charging systems due to its high voltage and current handling capabilities.
- UPS / Solar Systems: Applicable in uninterruptible power supplies and solar power systems for efficient energy management.
Q & A
- What is the maximum drain to source voltage of the NTP082N65S3F MOSFET?
The maximum drain to source voltage (VDSS) is 650 V at TJ = 25°C and 700 V at TJ = 150°C.
- What is the typical on-resistance of the NTP082N65S3F?
The typical static drain to source on-resistance (RDS(on)) is 70 mΩ at VGS = 10 V, ID = 20 A.
- What is the total gate charge of the NTP082N65S3F?
The typical total gate charge (Qg(tot)) is 81 nC at VDS = 400 V, ID = 20 A, VGS = 10 V.
- Is the NTP082N65S3F Pb-Free and RoHS Compliant?
Yes, the device is Pb-Free and RoHS Compliant.
- What are the typical applications of the NTP082N65S3F MOSFET?
Typical applications include telecom/server power supplies, industrial power supplies, EV chargers, and UPS/solar systems.
- What is the thermal resistance, junction to case, of the NTP082N65S3F?
The thermal resistance, junction to case (RθJC), is 0.4 °C/W.
- What is the maximum continuous drain current of the NTP082N65S3F at TC = 25°C?
The maximum continuous drain current (ID) is 40 A at TC = 25°C.
- What is the gate threshold voltage of the NTP082N65S3F?
The gate threshold voltage (VGS(th)) is between 3.0 V and 5.0 V.
- Does the NTP082N65S3F have optimized reverse recovery performance?
Yes, the device has optimized reverse recovery performance of the body diode, which can remove the need for additional components and improve system reliability.
- What is the maximum lead temperature for soldering the NTP082N65S3F?
The maximum lead temperature for soldering is 300 °C for 1/8″ from the case for 5 seconds.
