NTMTS4D3N15MC
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onsemi NTMTS4D3N15MC

Manufacturer No:
NTMTS4D3N15MC
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
SINGLE N-CHANNEL POWER MOSFET 15
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMTS4D3N15MC is an N-Channel Power MOSFET produced by onsemi, utilizing their advanced Power Trench process with Shielded Gate technology. This MOSFET is designed for low to medium voltage applications and offers high performance and reliability. It is packaged in an 8-DFNW surface mount package, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)150 V
Continuous Drain Current (Id)22 A (Ta), 174 A (Tc)
Power Dissipation (Pd)5 W (Ta), 293 W (Tc)
Minimum Operating Temperature-55°C
Maximum Operating Temperature+175°C
Channel ModeEnhancement
Package Type8-DFNW (8.3x8.4 mm)

Key Features

  • Advanced Power Trench process with Shielded Gate technology for improved performance and reliability.
  • High voltage rating of 150 V, suitable for a range of power management applications.
  • High continuous drain current of up to 22 A at ambient temperature and 174 A at case temperature.
  • Low on-resistance and high power dissipation capabilities.
  • Compact 8-DFNW surface mount package for efficient board space utilization.

Applications

The NTMTS4D3N15MC MOSFET is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching and power management in industrial and automotive systems.
  • High-frequency switching applications due to its low on-resistance and high switching speed.

Q & A

  1. What is the voltage rating of the NTMTS4D3N15MC MOSFET?
    The voltage rating is 150 V.
  2. What is the continuous drain current of the NTMTS4D3N15MC?
    The continuous drain current is 22 A at ambient temperature and 174 A at case temperature.
  3. What is the power dissipation capability of the NTMTS4D3N15MC?
    The power dissipation is 5 W at ambient temperature and 293 W at case temperature.
  4. What is the operating temperature range of the NTMTS4D3N15MC?
    The operating temperature range is from -55°C to +175°C.
  5. What is the package type of the NTMTS4D3N15MC?
    The package type is 8-DFNW (8.3x8.4 mm).
  6. What technology is used in the NTMTS4D3N15MC MOSFET?
    The MOSFET uses onsemi's advanced Power Trench process with Shielded Gate technology.
  7. What are some typical applications of the NTMTS4D3N15MC?
    Typical applications include power supplies, DC-DC converters, motor control, and high-frequency switching applications.
  8. Is the NTMTS4D3N15MC suitable for high-frequency switching?
    Yes, it is suitable due to its low on-resistance and high switching speed.
  9. Where can I find detailed specifications for the NTMTS4D3N15MC?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other authorized distributors like Mouser and Digi-Key.
  10. What is the channel mode of the NTMTS4D3N15MC MOSFET?
    The channel mode is enhancement.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 174A (Tc)
Drive Voltage (Max Rds On, Min Rds On):8V, 10V
Rds On (Max) @ Id, Vgs:4.45mOhm @ 95A, 10V
Vgs(th) (Max) @ Id:4.5V @ 521µA
Gate Charge (Qg) (Max) @ Vgs:79 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6514 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):5W (Ta), 293W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFNW (8.3x8.4)
Package / Case:8-PowerTDFN
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