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NTMTS0D7N06CTXG
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onsemi NTMTS0D7N06CTXG

Manufacturer No:
NTMTS0D7N06CTXG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 60.5A/464A 8DFNW
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMTS0D7N06CTXG is an N-Channel, low to medium voltage MOSFET produced by onsemi. This MOSFET is fabricated using onsemi’s advanced Power Trench process, which incorporates Shielded Gate technology. This technology is optimized to minimize on-state resistance while maintaining superior switching performance and a best-in-class soft body diode.

Key Specifications

Parameter Value
Channel Mode Enhancement
Channel Polarity N-Channel
VDS (Max) 60 V
RDS(on) Max @ VGS = 10 V 0.72 mΩ
ID Max 464 A
PD Max 294.6 W
TJ Max 175°C
TMin Operating Temperature -55°C
Package Type PQFN 8x8 (DFNW-8)
RoHS Compliance Yes

Key Features

  • Very low on-state resistance (RDS(on)) of 0.72 mΩ at VGS = 10 V.
  • Shielded Gate Trench technology for superior switching performance and a soft body diode.
  • Low profile PQFN 8x8 package.
  • Maximum junction temperature of 175°C.
  • RoHS compliant.

Applications

  • Motor Control
  • DC-DC Converters
  • Battery Management/Protection
  • Power Steering/Load Switch
  • Power Tools, E-Scooters, Drones
  • Battery Packs/Energy Storage Units
  • Telecom, Netcom
  • Power Supplies

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTMTS0D7N06CTXG MOSFET?

    The maximum drain-source voltage (VDS) is 60 V.

  2. What is the on-state resistance (RDS(on)) of the NTMTS0D7N06CTXG MOSFET at VGS = 10 V?

    The on-state resistance (RDS(on)) is 0.72 mΩ at VGS = 10 V.

  3. What is the maximum continuous drain current (ID) of the NTMTS0D7N06CTXG MOSFET?

    The maximum continuous drain current (ID) is 464 A.

  4. What is the maximum junction temperature (TJ) of the NTMTS0D7N06CTXG MOSFET?

    The maximum junction temperature (TJ) is 175°C.

  5. What package type is used for the NTMTS0D7N06CTXG MOSFET?

    The package type is PQFN 8x8 (DFNW-8).

  6. Is the NTMTS0D7N06CTXG MOSFET RoHS compliant?

    Yes, the NTMTS0D7N06CTXG MOSFET is RoHS compliant.

  7. What are some typical applications of the NTMTS0D7N06CTXG MOSFET?

    Typical applications include motor control, DC-DC converters, battery management/protection, power steering/load switch, power tools, e-scooters, drones, battery packs/energy storage units, telecom, netcom, and power supplies.

  8. What technology is used in the fabrication of the NTMTS0D7N06CTXG MOSFET?

    The NTMTS0D7N06CTXG MOSFET is fabricated using onsemi’s advanced Power Trench process with Shielded Gate technology.

  9. What is the minimum operating temperature of the NTMTS0D7N06CTXG MOSFET?

    The minimum operating temperature is -55°C.

  10. What is the maximum power dissipation (PD) of the NTMTS0D7N06CTXG MOSFET?

    The maximum power dissipation (PD) is 294.6 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:60.5A (Ta), 464A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:0.72mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:152 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:11535 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):5W (Ta), 294.6W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-DFNW (8.3x8.4)
Package / Case:8-PowerTDFN
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Similar Products

Part Number NTMTS0D7N06CTXG NTMTS0D7N04CTXG NTMTS0D7N06CLTXG
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 60.5A (Ta), 464A (Tc) 65A (Ta), 420A (Tc) 62.2A (Ta), 477A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.72mOhm @ 50A, 10V 0.67mOhm @ 50A, 10V 0.68mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V 140 nC @ 10 V 225 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 11535 pF @ 30 V 9230 pF @ 25 V 16200 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 5W (Ta), 294.6W (Tc) 4.9W (Ta), 205W (Tc) 5W (Ta), 294.6W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-DFNW (8.3x8.4) 8-DFNW (8.3x8.4) 8-DFNW (8.3x8.4)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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