NTMS5835NLR2G
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onsemi NTMS5835NLR2G

Manufacturer No:
NTMS5835NLR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 9.2A 8SOIC
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NTMS5835NLR2G is an N-Channel Power MOSFET manufactured by onsemi. This device is designed to operate at a maximum drain-source voltage (Vds) of 40 V and can handle a continuous drain current (Id) of up to 9.2 A at ambient temperature. It is packaged in an SO-8 surface mount configuration, making it suitable for a variety of power management and switching applications. The MOSFET is known for its low on-resistance and high efficiency, which are crucial for minimizing power losses in electronic circuits.

Key Specifications

ParameterValue
Drain-Source Voltage (Vds)40 V
Continuous Drain Current (Id)9.2 A (Ta = 25°C)
On-Resistance (Rds(on))10 mΩ (typical at Vgs = 10 V)
Package TypeSO-8
Power Dissipation (Pd)1.5 W (Ta = 25°C)
Operating Temperature Range-55°C to 150°C

Key Features

  • Low on-resistance (Rds(on)) of 10 mΩ, reducing power losses and improving efficiency.
  • High current handling capability of up to 9.2 A.
  • Maximum drain-source voltage of 40 V, suitable for various power management applications.
  • SO-8 surface mount package for easy integration into PCB designs.
  • Wide operating temperature range from -55°C to 150°C.

Applications

The NTMS5835NLR2G is versatile and can be used in a range of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Switching regulators and buck converters.
  • Automotive and industrial power management systems.
  • General-purpose switching applications.

Q & A

  1. What is the maximum drain-source voltage of the NTMS5835NLR2G?
    The maximum drain-source voltage (Vds) is 40 V.
  2. What is the continuous drain current rating of the NTMS5835NLR2G at ambient temperature?
    The continuous drain current (Id) is up to 9.2 A at ambient temperature (Ta = 25°C).
  3. What is the typical on-resistance of the NTMS5835NLR2G?
    The typical on-resistance (Rds(on)) is 10 mΩ at Vgs = 10 V.
  4. What package type is the NTMS5835NLR2G available in?
    The NTMS5835NLR2G is available in an SO-8 surface mount package.
  5. What is the power dissipation rating of the NTMS5835NLR2G?
    The power dissipation (Pd) is 1.5 W at ambient temperature (Ta = 25°C).
  6. What is the operating temperature range of the NTMS5835NLR2G?
    The operating temperature range is from -55°C to 150°C.
  7. Where can I find detailed specifications for the NTMS5835NLR2G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Digi-Key.
  8. Is the NTMS5835NLR2G suitable for automotive applications?
    Yes, the NTMS5835NLR2G is suitable for automotive and industrial power management systems due to its robust specifications and wide operating temperature range.
  9. Can the NTMS5835NLR2G be used in high-frequency switching applications?
    Yes, the NTMS5835NLR2G can be used in high-frequency switching applications due to its low on-resistance and high efficiency.
  10. How do I ensure proper thermal management for the NTMS5835NLR2G?
    Proper thermal management can be ensured by following the guidelines in the datasheet, including using appropriate heat sinks and ensuring good thermal conductivity between the device and the PCB.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2115 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number NTMS5835NLR2G NTMS5838NLR2G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta) 5.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 10A, 10V 25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2115 pF @ 20 V 785 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 1.5W (Ta) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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