NTMS4916NR2G
  • Share:

onsemi NTMS4916NR2G

Manufacturer No:
NTMS4916NR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 7.8A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMS4916NR2G is a high-performance N-Channel MOSFET manufactured by onsemi. This device is designed to offer high efficiency and reliability in various power management applications. It features a low on-resistance and high current handling capability, making it suitable for a wide range of electronic systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)7.8 A
RDS(ON) (On-Resistance at 12 A, 10 V)9 mΩ
VGS(th) (Threshold Voltage)2.5 V @ 250 μA
PD (Power Dissipation)890 mW
PackageSOIC-8
RoHS ComplianceYes

Key Features

  • Low on-resistance (RDS(ON)) of 9 mΩ at 12 A, 10 V, enhancing efficiency in power management.
  • High continuous drain current (ID) of 7.8 A, suitable for high-power applications.
  • Compact SOIC-8 package, ideal for space-constrained designs.
  • RoHS compliant, ensuring environmental sustainability.
  • High threshold voltage (VGS(th)) of 2.5 V @ 250 μA, providing reliable switching performance.

Applications

The NTMS4916NR2G MOSFET is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and other high-power audio equipment.
  • Automotive and industrial power management systems.
  • General-purpose switching and power management in electronic devices.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTMS4916NR2G?
    The maximum drain-source voltage is 30 V.
  2. What is the continuous drain current (ID) of the NTMS4916NR2G?
    The continuous drain current is 7.8 A.
  3. What is the on-resistance (RDS(ON)) of the NTMS4916NR2G at 12 A, 10 V?
    The on-resistance is 9 mΩ at 12 A, 10 V.
  4. What is the threshold voltage (VGS(th)) of the NTMS4916NR2G?
    The threshold voltage is 2.5 V @ 250 μA.
  5. What is the power dissipation (PD) of the NTMS4916NR2G?
    The power dissipation is 890 mW.
  6. In what package is the NTMS4916NR2G available?
    The NTMS4916NR2G is available in an SOIC-8 package.
  7. Is the NTMS4916NR2G RoHS compliant?
    Yes, the NTMS4916NR2G is RoHS compliant.
  8. What are some common applications of the NTMS4916NR2G?
    Common applications include power supplies, DC-DC converters, motor control, audio amplifiers, and automotive/industrial power management.
  9. Where can I find detailed specifications for the NTMS4916NR2G?
    Detailed specifications can be found in the datasheet available on official websites like onsemi, Mouser, Digi-Key, and other electronic component suppliers.
  10. What is the significance of the low on-resistance in the NTMS4916NR2G?
    The low on-resistance enhances efficiency in power management by reducing power losses during switching operations.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1376 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):890mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.80
58

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTMS4916NR2G NTMS4917NR2G NTMS4816NR2G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 7.8A (Ta) 7.1A (Ta) 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 12A, 10V 11mOhm @ 11A, 10V 10mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 15.6 nC @ 4.5 V 18.3 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1376 pF @ 25 V 1054 pF @ 25 V 1060 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 890mW (Ta) 880mW (Ta) 780mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
NTD4909NT4G
NTD4909NT4G
onsemi
MOSFET N-CH 30V 8.8A/41A DPAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

SZMMBZ5226BLT1G
SZMMBZ5226BLT1G
onsemi
DIODE ZENER 3.3V 225MW SOT23-3
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO