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NTMS4916NR2G
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onsemi NTMS4916NR2G

Manufacturer No:
NTMS4916NR2G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 7.8A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMS4916NR2G is a high-performance N-Channel MOSFET manufactured by onsemi. This device is designed to offer high efficiency and reliability in various power management applications. It features a low on-resistance and high current handling capability, making it suitable for a wide range of electronic systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)7.8 A
RDS(ON) (On-Resistance at 12 A, 10 V)9 mΩ
VGS(th) (Threshold Voltage)2.5 V @ 250 μA
PD (Power Dissipation)890 mW
PackageSOIC-8
RoHS ComplianceYes

Key Features

  • Low on-resistance (RDS(ON)) of 9 mΩ at 12 A, 10 V, enhancing efficiency in power management.
  • High continuous drain current (ID) of 7.8 A, suitable for high-power applications.
  • Compact SOIC-8 package, ideal for space-constrained designs.
  • RoHS compliant, ensuring environmental sustainability.
  • High threshold voltage (VGS(th)) of 2.5 V @ 250 μA, providing reliable switching performance.

Applications

The NTMS4916NR2G MOSFET is versatile and can be used in a variety of applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and other high-power audio equipment.
  • Automotive and industrial power management systems.
  • General-purpose switching and power management in electronic devices.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NTMS4916NR2G?
    The maximum drain-source voltage is 30 V.
  2. What is the continuous drain current (ID) of the NTMS4916NR2G?
    The continuous drain current is 7.8 A.
  3. What is the on-resistance (RDS(ON)) of the NTMS4916NR2G at 12 A, 10 V?
    The on-resistance is 9 mΩ at 12 A, 10 V.
  4. What is the threshold voltage (VGS(th)) of the NTMS4916NR2G?
    The threshold voltage is 2.5 V @ 250 μA.
  5. What is the power dissipation (PD) of the NTMS4916NR2G?
    The power dissipation is 890 mW.
  6. In what package is the NTMS4916NR2G available?
    The NTMS4916NR2G is available in an SOIC-8 package.
  7. Is the NTMS4916NR2G RoHS compliant?
    Yes, the NTMS4916NR2G is RoHS compliant.
  8. What are some common applications of the NTMS4916NR2G?
    Common applications include power supplies, DC-DC converters, motor control, audio amplifiers, and automotive/industrial power management.
  9. Where can I find detailed specifications for the NTMS4916NR2G?
    Detailed specifications can be found in the datasheet available on official websites like onsemi, Mouser, Digi-Key, and other electronic component suppliers.
  10. What is the significance of the low on-resistance in the NTMS4916NR2G?
    The low on-resistance enhances efficiency in power management by reducing power losses during switching operations.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1376 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):890mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number NTMS4916NR2G NTMS4917NR2G NTMS4816NR2G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 7.8A (Ta) 7.1A (Ta) 6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 12A, 10V 11mOhm @ 11A, 10V 10mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 15.6 nC @ 4.5 V 18.3 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1376 pF @ 25 V 1054 pF @ 25 V 1060 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 890mW (Ta) 880mW (Ta) 780mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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