Overview
The NTMS4816NR2G is a power N-Channel MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in an SO-8 case and is Pb-free and RoHS compliant. It features low RDS(on) to minimize conduction losses, low capacitance to minimize driver losses, and optimized gate charge to minimize switching losses. These characteristics make it an ideal choice for various power management and switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TA = 25°C) | ID | 9.0 | A |
| Continuous Drain Current (TA = 70°C) | ID | 7.2 | A |
| Power Dissipation (TA = 25°C) | PD | 1.37 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 33 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to 150 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 9 A) | RDS(on) | 8.2 - 10 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.5 - 3.0 | V |
Key Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free and RoHS compliant
- High continuous drain current and power dissipation capabilities
- Wide operating junction and storage temperature range
- Low forward diode voltage and fast reverse recovery time
Applications
- Disk Drives
- DC-DC Converters
- Printers
- Other high-performance power management and switching applications
Q & A
- What is the maximum drain-to-source voltage of the NTMS4816NR2G?
The maximum drain-to-source voltage (VDSS) is 30 V.
- What is the continuous drain current at 25°C and 70°C?
The continuous drain current is 9.0 A at 25°C and 7.2 A at 70°C.
- What is the power dissipation at 25°C?
The power dissipation (PD) is 1.37 W at 25°C.
- What is the pulsed drain current for a 10 μs pulse?
The pulsed drain current (IDM) is 33 A for a 10 μs pulse.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to 150 °C.
- What is the typical drain-to-source on resistance?
The typical drain-to-source on resistance (RDS(on)) is 8.2 - 10 mΩ at VGS = 10 V and ID = 9 A.
- Is the NTMS4816NR2G Pb-free and RoHS compliant?
Yes, the NTMS4816NR2G is Pb-free and RoHS compliant.
- What are some typical applications for the NTMS4816NR2G?
Typical applications include disk drives, DC-DC converters, printers, and other high-performance power management and switching applications.
- What is the gate threshold voltage range?
The gate threshold voltage (VGS(TH)) range is 1.5 - 3.0 V.
- What is the forward diode voltage at 25°C?
The forward diode voltage (VSD) is 0.75 - 1.0 V at 25°C.
