Overview
The NTMFS6H801NT1G is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for power applications, offering a compact footprint and low on-resistance. It is part of onsemi's portfolio of power MOSFETs, known for their reliability and efficiency in various electronic systems.
This MOSFET features a single N-Channel configuration, making it suitable for a wide range of power management and switching applications. Its small DFN5 package (5x6 mm) is ideal for compact design requirements, while its low RDS(on) and minimal driver losses enhance overall system efficiency.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Channel Type | N | - | - |
| Maximum Continuous Drain Current | ID | 157 A | A |
| Maximum Drain Source Voltage | VDS | 80 V | V |
| Package Type | - | DFN5 | - |
| Mounting Type | - | Surface Mount | - |
| Pin Count | - | 5 | - |
| Maximum Drain Source Resistance | RDS(on) | 4.4 mΩ | mΩ |
| Channel Mode | - | Enhancement | - |
| Maximum Gate Threshold Voltage | VGS(TH) | 4 V | V |
| Minimum Gate Threshold Voltage | VGS(TH) | 2 V | V |
| Maximum Power Dissipation | PD | 166 W | W |
| Maximum Gate Source Voltage | VGS | ±20 V | V |
| Maximum Operating Temperature | TJ | +175 °C | °C |
| Minimum Operating Temperature | TJ | -55 °C | °C |
| Forward Diode Voltage | VSD | 1.2 V | V |
| Typical Gate Charge @ Vgs | QG(TOT) | 64 nC @ 10 V | nC |
Key Features
- Compact Design: The NTMFS6H801NT1G features a small DFN5 package (5x6 mm), making it ideal for space-constrained applications.
- Low On-Resistance: With a maximum RDS(on) of 4.4 mΩ, this MOSFET minimizes conduction losses and enhances system efficiency.
- Low Gate Charge and Capacitance: The device has low QG and capacitance, which helps in minimizing driver losses and improving switching performance.
- Pb-Free and RoHS Compliant: This MOSFET is lead-free and compliant with RoHS regulations, ensuring environmental sustainability.
- High Current Capability: It can handle a maximum continuous drain current of 157 A, making it suitable for high-power applications.
- Wide Operating Temperature Range: The device operates over a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions.
Applications
- Power Management Systems: Ideal for use in power supplies, DC-DC converters, and other power management circuits.
- Motor Control: Suitable for motor drive applications due to its high current handling and low on-resistance.
- Switching Applications: Used in switching circuits, such as inverter and converter systems, where high efficiency and reliability are critical.
- Automotive Systems: Can be used in automotive electronics, including battery management and power distribution systems.
- Industrial Automation: Applicable in industrial automation for controlling high-power devices and systems.
Q & A
- What is the maximum continuous drain current of the NTMFS6H801NT1G MOSFET?
The maximum continuous drain current is 157 A.
- What is the maximum drain source voltage of this MOSFET?
The maximum drain source voltage is 80 V.
- What is the package type of the NTMFS6H801NT1G?
The package type is DFN5 (5x6 mm).
- What is the maximum gate threshold voltage of this device?
The maximum gate threshold voltage is 4 V.
- Is the NTMFS6H801NT1G Pb-Free and RoHS compliant?
Yes, it is Pb-Free and RoHS compliant.
- What is the typical gate charge at Vgs = 10 V for this MOSFET?
The typical gate charge is 64 nC at Vgs = 10 V.
- What is the maximum operating temperature of the NTMFS6H801NT1G?
The maximum operating temperature is +175 °C.
- What are some common applications of the NTMFS6H801NT1G MOSFET?
Common applications include power management systems, motor control, switching applications, automotive systems, and industrial automation.
- What is the forward diode voltage of this MOSFET?
The forward diode voltage is 1.2 V.
- What is the maximum power dissipation of the NTMFS6H801NT1G?
The maximum power dissipation is 166 W.
