NTMFS6H800NT1G
  • Share:

onsemi NTMFS6H800NT1G

Manufacturer No:
NTMFS6H800NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 28A/203A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS6H800NT1G is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for high-power applications, offering excellent thermal management and reliability. It features a surface mount 5-DFN (5x6) package, making it suitable for a variety of modern electronic systems that require compact and efficient power management.

Key Specifications

ParameterSymbolValueUnit
Minimum Operating Temperature--55°C
Maximum Operating Temperature-175°C
Drain-Source VoltageVds80V
Continuous Drain Current at Ta=25°CId28 AA
Continuous Drain Current at Tc=25°CId203 AA
Power Dissipation at Ta=25°CPd3.8 WW
Power Dissipation at Tc=25°CPd200 WW
Junction-to-Case Thermal ResistanceRθJC0.7°C/W
Package Type-5-DFN (5x6)-

Key Features

  • High current handling capability with continuous drain current up to 203 A at Tc=25°C.
  • High voltage rating of 80 V, suitable for various high-power applications.
  • Low junction-to-case thermal resistance (RθJC) of 0.7 °C/W, ensuring efficient heat dissipation.
  • Compact 5-DFN (5x6) surface mount package, ideal for space-constrained designs.
  • Wide operating temperature range from -55°C to 175°C, enhancing reliability in harsh environments.

Applications

The NTMFS6H800NT1G MOSFET is versatile and can be used in a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial power systems, including inverters and switch-mode power supplies.
  • Aerospace and defense applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the NTMFS6H800NT1G MOSFET?
    The maximum drain-source voltage (Vds) is 80 V.
  2. What is the continuous drain current at Ta=25°C?
    The continuous drain current at Ta=25°C is 28 A.
  3. What is the continuous drain current at Tc=25°C?
    The continuous drain current at Tc=25°C is 203 A.
  4. What is the power dissipation at Ta=25°C?
    The power dissipation at Ta=25°C is 3.8 W.
  5. What is the junction-to-case thermal resistance?
    The junction-to-case thermal resistance (RθJC) is 0.7 °C/W.
  6. What is the package type of the NTMFS6H800NT1G?
    The package type is 5-DFN (5x6).
  7. What is the operating temperature range of the NTMFS6H800NT1G?
    The operating temperature range is from -55°C to 175°C.
  8. In what types of applications is the NTMFS6H800NT1G commonly used?
    It is commonly used in power supplies, motor control systems, automotive systems, industrial power systems, and aerospace applications.
  9. Why is the NTMFS6H800NT1G suitable for high-power applications?
    It is suitable due to its high current handling capability, high voltage rating, and efficient thermal management.
  10. Where can I find detailed specifications for the NTMFS6H800NT1G?
    Detailed specifications can be found in the datasheet available on onsemi's official website or through distributors like Mouser, Digi-Key, and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:28A (Ta), 203A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 330µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5530 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$6.19
155

Please send RFQ , we will respond immediately.

Similar Products

Part Number NTMFS6H800NT1G NTMFS6H801NT1G NTMFS6H800NLT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 203A (Tc) 23A (Ta), 157A (Tc) 30A (Ta), 224A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V 2.8mOhm @ 50A, 10V 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 330µA 4V @ 250µA 2V @ 330µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 64 nC @ 10 V 112 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5530 pF @ 40 V 4120 pF @ 40 V 6900 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 166W (Tc) 3.9W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
SBC856ALT1G
SBC856ALT1G
onsemi
TRANS PNP 65V 0.1A SOT23-3
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
CAT24C16YI-GT3JN
CAT24C16YI-GT3JN
onsemi
IC EEPROM 16KBIT I2C 8TSSOP
FAN48610BUC33X
FAN48610BUC33X
onsemi
IC REG BOOST 3.3V 1A 9WLCSP