NTMFS6H800NT1G
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onsemi NTMFS6H800NT1G

Manufacturer No:
NTMFS6H800NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 28A/203A 5DFN
Delivery:
Payment:
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Product Introduction

Overview

The NTMFS6H800NT1G is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for high-power applications, offering excellent thermal management and reliability. It features a surface mount 5-DFN (5x6) package, making it suitable for a variety of modern electronic systems that require compact and efficient power management.

Key Specifications

ParameterSymbolValueUnit
Minimum Operating Temperature--55°C
Maximum Operating Temperature-175°C
Drain-Source VoltageVds80V
Continuous Drain Current at Ta=25°CId28 AA
Continuous Drain Current at Tc=25°CId203 AA
Power Dissipation at Ta=25°CPd3.8 WW
Power Dissipation at Tc=25°CPd200 WW
Junction-to-Case Thermal ResistanceRθJC0.7°C/W
Package Type-5-DFN (5x6)-

Key Features

  • High current handling capability with continuous drain current up to 203 A at Tc=25°C.
  • High voltage rating of 80 V, suitable for various high-power applications.
  • Low junction-to-case thermal resistance (RθJC) of 0.7 °C/W, ensuring efficient heat dissipation.
  • Compact 5-DFN (5x6) surface mount package, ideal for space-constrained designs.
  • Wide operating temperature range from -55°C to 175°C, enhancing reliability in harsh environments.

Applications

The NTMFS6H800NT1G MOSFET is versatile and can be used in a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial power systems, including inverters and switch-mode power supplies.
  • Aerospace and defense applications requiring high reliability and performance.

Q & A

  1. What is the maximum drain-source voltage of the NTMFS6H800NT1G MOSFET?
    The maximum drain-source voltage (Vds) is 80 V.
  2. What is the continuous drain current at Ta=25°C?
    The continuous drain current at Ta=25°C is 28 A.
  3. What is the continuous drain current at Tc=25°C?
    The continuous drain current at Tc=25°C is 203 A.
  4. What is the power dissipation at Ta=25°C?
    The power dissipation at Ta=25°C is 3.8 W.
  5. What is the junction-to-case thermal resistance?
    The junction-to-case thermal resistance (RθJC) is 0.7 °C/W.
  6. What is the package type of the NTMFS6H800NT1G?
    The package type is 5-DFN (5x6).
  7. What is the operating temperature range of the NTMFS6H800NT1G?
    The operating temperature range is from -55°C to 175°C.
  8. In what types of applications is the NTMFS6H800NT1G commonly used?
    It is commonly used in power supplies, motor control systems, automotive systems, industrial power systems, and aerospace applications.
  9. Why is the NTMFS6H800NT1G suitable for high-power applications?
    It is suitable due to its high current handling capability, high voltage rating, and efficient thermal management.
  10. Where can I find detailed specifications for the NTMFS6H800NT1G?
    Detailed specifications can be found in the datasheet available on onsemi's official website or through distributors like Mouser, Digi-Key, and RS Components.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:28A (Ta), 203A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 330µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5530 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS6H800NT1G NTMFS6H801NT1G NTMFS6H800NLT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 28A (Ta), 203A (Tc) 23A (Ta), 157A (Tc) 30A (Ta), 224A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V 2.8mOhm @ 50A, 10V 1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 330µA 4V @ 250µA 2V @ 330µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 64 nC @ 10 V 112 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5530 pF @ 40 V 4120 pF @ 40 V 6900 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 166W (Tc) 3.9W (Ta), 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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