NTMFS6H800NLT1G
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onsemi NTMFS6H800NLT1G

Manufacturer No:
NTMFS6H800NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 30A/224A 5DFN
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The NTMFS6H800NLT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. The MOSFET features a small footprint in a DFN5 (SO-8FL) package, which is ideal for compact design requirements. It is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 80 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (TJ = 25°C) ID 224 A
Continuous Drain Current (TJ = 100°C) ID 158 A
Power Dissipation (TJ = 25°C) PD 214 W
Power Dissipation (TJ = 100°C) PD 107 W
Pulsed Drain Current (TA = 25°C, tp = 10 μs) IDM 900 A
Operating Junction and Storage Temperature Range TJ, Tstg −55 to +175 °C
Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) RDS(on) 1.5 - 1.9
Gate Threshold Voltage VGS(TH) 1.2 - 2.0 V
Total Gate Charge (VGS = 10 V, VDS = 40 V; ID = 50 A) QG(TOT) 112 nC

Key Features

  • Small Footprint: The device is packaged in a compact DFN5 (SO-8FL) package, measuring 4.90 x 5.90 x 1.00 mm, ideal for space-constrained designs.
  • Low RDS(on): The MOSFET has a low on-resistance of 1.5 - 1.9 mΩ at VGS = 10 V and ID = 50 A, minimizing conduction losses.
  • Low QG and Capacitance: It features low total gate charge and capacitance, which helps in minimizing driver losses.
  • Pb-free and RoHS Compliant: The device is lead-free and compliant with RoHS regulations, ensuring environmental sustainability.
  • High Current Handling: Capable of handling high continuous drain currents up to 224 A at TJ = 25°C.
  • Wide Operating Temperature Range: Operates over a temperature range of −55 to +175°C.

Applications

  • Power Management: Suitable for various power management applications including DC-DC converters, power supplies, and voltage regulators.
  • Switching Applications: Ideal for high-frequency switching applications due to its low on-resistance and fast switching times.
  • Automotive Systems: Can be used in automotive systems for power steering, fuel pumps, and other high-current applications.
  • Industrial Control Systems: Applicable in industrial control systems, motor drives, and other high-power electronic devices.

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS6H800NLT1G MOSFET?

    The maximum drain-to-source voltage (VDSS) is 80 V.

  2. What is the continuous drain current rating at TJ = 25°C?

    The continuous drain current (ID) at TJ = 25°C is 224 A.

  3. What is the typical on-resistance of the MOSFET at VGS = 10 V and ID = 50 A?

    The typical on-resistance (RDS(on)) is 1.9 mΩ at VGS = 10 V and ID = 50 A.

  4. Is the NTMFS6H800NLT1G Pb-free and RoHS compliant?
  5. What is the operating junction and storage temperature range of the MOSFET?

    The operating junction and storage temperature range is −55 to +175°C.

  6. What is the total gate charge at VGS = 10 V, VDS = 40 V, and ID = 50 A?

    The total gate charge (QG(TOT)) is 112 nC.

  7. What is the package type and dimensions of the NTMFS6H800NLT1G?

    The package type is DFN5 (SO-8FL), with dimensions of 4.90 x 5.90 x 1.00 mm.

  8. What are some typical applications for the NTMFS6H800NLT1G MOSFET?

    Typical applications include power management, switching applications, automotive systems, and industrial control systems.

  9. What is the maximum pulsed drain current rating at TA = 25°C and tp = 10 μs?

    The maximum pulsed drain current (IDM) is 900 A at TA = 25°C and tp = 10 μs.

  10. What is the gate threshold voltage range of the MOSFET?

    The gate threshold voltage (VGS(TH)) range is 1.2 to 2.0 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:30A (Ta), 224A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 330µA
Gate Charge (Qg) (Max) @ Vgs:112 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6900 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.9W (Ta), 214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS6H800NLT1G NTMFS6H800NT1G NTMFS6H801NLT1G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 224A (Tc) 28A (Ta), 203A (Tc) 24A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 6V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 50A, 10V 2.1mOhm @ 50A, 10V 2.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 330µA 4V @ 330µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 112 nC @ 10 V 85 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6900 pF @ 40 V 5530 pF @ 40 V 5126 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 3.9W (Ta), 214W (Tc) 3.8W (Ta), 200W (Tc) 3.8W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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