Overview
The NTMFS6H800NLT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed to offer low on-resistance and high current handling capabilities, making it suitable for a variety of power management and switching applications. The MOSFET features a small footprint in a DFN5 (SO-8FL) package, which is ideal for compact design requirements. It is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 80 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 224 | A |
| Continuous Drain Current (TJ = 100°C) | ID | 158 | A |
| Power Dissipation (TJ = 25°C) | PD | 214 | W |
| Power Dissipation (TJ = 100°C) | PD | 107 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 900 | A |
| Operating Junction and Storage Temperature Range | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 1.5 - 1.9 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Total Gate Charge (VGS = 10 V, VDS = 40 V; ID = 50 A) | QG(TOT) | 112 | nC |
Key Features
- Small Footprint: The device is packaged in a compact DFN5 (SO-8FL) package, measuring 4.90 x 5.90 x 1.00 mm, ideal for space-constrained designs.
- Low RDS(on): The MOSFET has a low on-resistance of 1.5 - 1.9 mΩ at VGS = 10 V and ID = 50 A, minimizing conduction losses.
- Low QG and Capacitance: It features low total gate charge and capacitance, which helps in minimizing driver losses.
- Pb-free and RoHS Compliant: The device is lead-free and compliant with RoHS regulations, ensuring environmental sustainability.
- High Current Handling: Capable of handling high continuous drain currents up to 224 A at TJ = 25°C.
- Wide Operating Temperature Range: Operates over a temperature range of −55 to +175°C.
Applications
- Power Management: Suitable for various power management applications including DC-DC converters, power supplies, and voltage regulators.
- Switching Applications: Ideal for high-frequency switching applications due to its low on-resistance and fast switching times.
- Automotive Systems: Can be used in automotive systems for power steering, fuel pumps, and other high-current applications.
- Industrial Control Systems: Applicable in industrial control systems, motor drives, and other high-power electronic devices.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS6H800NLT1G MOSFET?
The maximum drain-to-source voltage (VDSS) is 80 V.
- What is the continuous drain current rating at TJ = 25°C?
The continuous drain current (ID) at TJ = 25°C is 224 A.
- What is the typical on-resistance of the MOSFET at VGS = 10 V and ID = 50 A?
The typical on-resistance (RDS(on)) is 1.9 mΩ at VGS = 10 V and ID = 50 A.
- Is the NTMFS6H800NLT1G Pb-free and RoHS compliant?
- What is the operating junction and storage temperature range of the MOSFET?
The operating junction and storage temperature range is −55 to +175°C.
- What is the total gate charge at VGS = 10 V, VDS = 40 V, and ID = 50 A?
The total gate charge (QG(TOT)) is 112 nC.
- What is the package type and dimensions of the NTMFS6H800NLT1G?
The package type is DFN5 (SO-8FL), with dimensions of 4.90 x 5.90 x 1.00 mm.
- What are some typical applications for the NTMFS6H800NLT1G MOSFET?
Typical applications include power management, switching applications, automotive systems, and industrial control systems.
- What is the maximum pulsed drain current rating at TA = 25°C and tp = 10 μs?
The maximum pulsed drain current (IDM) is 900 A at TA = 25°C and tp = 10 μs.
- What is the gate threshold voltage range of the MOSFET?
The gate threshold voltage (VGS(TH)) range is 1.2 to 2.0 V.
