NTMFS5H610NLT1G
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onsemi NTMFS5H610NLT1G

Manufacturer No:
NTMFS5H610NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 12A 44A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS5H610NLT1G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for a wide range of applications requiring high current handling and low on-resistance. It features a compact 5-DFN (5x6) surface mount package, making it ideal for space-constrained designs. The MOSFET operates with a maximum drain-to-source voltage of 60 V and can handle high currents up to 44 A at the case temperature (Tc).

Key Specifications

ParameterValue
Channel ModeEnhancement
Maximum Operating Temperature+150°C
Power Dissipation (Ta)3 W
Power Dissipation (Tc)43 W
Drain-to-Source Voltage (Vds)60 V
Continuous Drain Current (Ta)12 A
Continuous Drain Current (Tc)44 A
On-Resistance (Rds(on))10 mΩ
Packaging5-DFN (5x6), Surface Mount

Key Features

  • Low on-resistance (Rds(on)) of 10 mΩ, ensuring minimal power loss and high efficiency.
  • High current handling capability up to 44 A at case temperature.
  • Compact 5-DFN (5x6) surface mount package, suitable for space-constrained designs.
  • Maximum operating temperature of +150°C, making it reliable in high-temperature environments.
  • Pb-Free and RoHS compliant, aligning with environmental regulations.

Applications

The NTMFS5H610NLT1G is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial control and automation.
  • Consumer electronics requiring high power density and efficiency.

Q & A

  1. What is the maximum operating temperature of the NTMFS5H610NLT1G?
    The maximum operating temperature is +150°C.
  2. What is the on-resistance (Rds(on)) of the NTMFS5H610NLT1G?
    The on-resistance is 10 mΩ.
  3. What is the maximum drain-to-source voltage (Vds) of the NTMFS5H610NLT1G?
    The maximum drain-to-source voltage is 60 V.
  4. What is the continuous drain current at ambient temperature (Ta) and case temperature (Tc)?
    The continuous drain current is 12 A at Ta and 44 A at Tc.
  5. What type of packaging does the NTMFS5H610NLT1G use?
    The device uses a 5-DFN (5x6) surface mount package.
  6. Is the NTMFS5H610NLT1G Pb-Free and RoHS compliant?
    Yes, the device is Pb-Free and RoHS compliant.
  7. What are some common applications for the NTMFS5H610NLT1G?
    Common applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics.
  8. What is the power dissipation capability of the NTMFS5H610NLT1G at Ta and Tc?
    The power dissipation is 3 W at Ta and 43 W at Tc.
  9. What is the channel mode of the NTMFS5H610NLT1G?
    The channel mode is enhancement.
  10. Where can I find detailed specifications and datasheets for the NTMFS5H610NLT1G?
    Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:13.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 43W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS5H610NLT1G NTMFS5H630NLT1G NTMFS5H615NLT1G NTMFS5H600NLT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 44A (Tc) 22A (Ta), 120A (Tc) 28A (Ta), 185A (Tc) 35A (Ta), 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 8A, 10V 3.1mOhm @ 20A, 10V 1.8mOhm @ 49A, 10V 1.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA 2V @ 130µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.7 nC @ 10 V 35 nC @ 10 V 63 nC @ 10 V 89 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 30 V 2540 pF @ 30 V 4860 pF @ 30 V 6680 pF @ 30 V
FET Feature - - - -
Power Dissipation (Max) 3W (Ta), 43W (Tc) 3.1W (Ta), 89W (Tc) 3.2W (Ta), 139W (Tc) 3.3W (Ta), 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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