NTMFS5H610NLT1G
  • Share:

onsemi NTMFS5H610NLT1G

Manufacturer No:
NTMFS5H610NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 12A 44A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS5H610NLT1G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for a wide range of applications requiring high current handling and low on-resistance. It features a compact 5-DFN (5x6) surface mount package, making it ideal for space-constrained designs. The MOSFET operates with a maximum drain-to-source voltage of 60 V and can handle high currents up to 44 A at the case temperature (Tc).

Key Specifications

ParameterValue
Channel ModeEnhancement
Maximum Operating Temperature+150°C
Power Dissipation (Ta)3 W
Power Dissipation (Tc)43 W
Drain-to-Source Voltage (Vds)60 V
Continuous Drain Current (Ta)12 A
Continuous Drain Current (Tc)44 A
On-Resistance (Rds(on))10 mΩ
Packaging5-DFN (5x6), Surface Mount

Key Features

  • Low on-resistance (Rds(on)) of 10 mΩ, ensuring minimal power loss and high efficiency.
  • High current handling capability up to 44 A at case temperature.
  • Compact 5-DFN (5x6) surface mount package, suitable for space-constrained designs.
  • Maximum operating temperature of +150°C, making it reliable in high-temperature environments.
  • Pb-Free and RoHS compliant, aligning with environmental regulations.

Applications

The NTMFS5H610NLT1G is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial control and automation.
  • Consumer electronics requiring high power density and efficiency.

Q & A

  1. What is the maximum operating temperature of the NTMFS5H610NLT1G?
    The maximum operating temperature is +150°C.
  2. What is the on-resistance (Rds(on)) of the NTMFS5H610NLT1G?
    The on-resistance is 10 mΩ.
  3. What is the maximum drain-to-source voltage (Vds) of the NTMFS5H610NLT1G?
    The maximum drain-to-source voltage is 60 V.
  4. What is the continuous drain current at ambient temperature (Ta) and case temperature (Tc)?
    The continuous drain current is 12 A at Ta and 44 A at Tc.
  5. What type of packaging does the NTMFS5H610NLT1G use?
    The device uses a 5-DFN (5x6) surface mount package.
  6. Is the NTMFS5H610NLT1G Pb-Free and RoHS compliant?
    Yes, the device is Pb-Free and RoHS compliant.
  7. What are some common applications for the NTMFS5H610NLT1G?
    Common applications include power supplies, motor control, automotive systems, industrial control, and consumer electronics.
  8. What is the power dissipation capability of the NTMFS5H610NLT1G at Ta and Tc?
    The power dissipation is 3 W at Ta and 43 W at Tc.
  9. What is the channel mode of the NTMFS5H610NLT1G?
    The channel mode is enhancement.
  10. Where can I find detailed specifications and datasheets for the NTMFS5H610NLT1G?
    Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Mouser and Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta) 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:13.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:880 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3W (Ta), 43W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
0 Remaining View Similar

In Stock

$1.63
32

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44S32S60T20
DD44S32S60T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10H00/AA
DD26S10H00/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S00X
DD44S32S00X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T2X
DD44S3200T2X
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20J00
DD26S20J00
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number NTMFS5H610NLT1G NTMFS5H630NLT1G NTMFS5H615NLT1G NTMFS5H600NLT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta) 44A (Tc) 22A (Ta), 120A (Tc) 28A (Ta), 185A (Tc) 35A (Ta), 250A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 8A, 10V 3.1mOhm @ 20A, 10V 1.8mOhm @ 49A, 10V 1.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 40µA 2V @ 130µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.7 nC @ 10 V 35 nC @ 10 V 63 nC @ 10 V 89 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 880 pF @ 30 V 2540 pF @ 30 V 4860 pF @ 30 V 6680 pF @ 30 V
FET Feature - - - -
Power Dissipation (Max) 3W (Ta), 43W (Tc) 3.1W (Ta), 89W (Tc) 3.2W (Ta), 139W (Tc) 3.3W (Ta), 160W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

Related Product By Categories

PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
MCH3478-TL-W
MCH3478-TL-W
onsemi
MOSFET N-CH 30V 2A 3MCPH

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MPSA42G
MPSA42G
onsemi
TRANS NPN 300V 0.5A TO92
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
NCP705MTADJTCG
NCP705MTADJTCG
onsemi
IC REG LIN POS ADJ 500MA 6WDFN
LM317MDTG
LM317MDTG
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT