Overview
The NTMFS5H600NLT1G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is part of the NTMFS5H600NL series and is designed for applications requiring high current handling and low on-resistance. With a compact DFN-5 package, it is ideal for space-constrained designs. The MOSFET features a drain-to-source voltage (Vdss) of 60V, a maximum drain current of 250A, and a low on-resistance (Rds(on)) of 1.3 mΩ at 10V gate voltage. This makes it suitable for a wide range of power management and switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Fet Type | N-Ch | - | - |
| No of Channels | 1 | - | - |
| Drain-to-Source Voltage [Vdss] | Vdss | 60 | V |
| Drain-Source On Resistance-Max [Rds(on)] | Rds(on) | 1.3 mΩ | mΩ |
| Rated Power Dissipation | Pd | 160 mW | mW |
| Gate Charge [Qg] | Qg | 40 nC | nC |
| Gate-Source Voltage-Max [Vgss] | Vgss | ±20 V | V |
| Drain Current [Id] | Id | 250 A | A |
| Turn-on Delay Time | td(on) | 28 ns | ns |
| Turn-off Delay Time | td(off) | 88 ns | ns |
| Rise Time | tr | 130 ns | ns |
| Fall Time | tf | 160 ns | ns |
| Operating Temp Range | Tj | -55°C to +150°C | °C |
| Gate Source Threshold | Vgs(th) | 2 V | V |
| Technology | - | Si | - |
| Input Capacitance | Ciss | 6680 pF | pF |
| Package Style | - | DFN-5 | - |
| Mounting Method | - | Surface Mount | - |
Key Features
- Low On-Resistance: The NTMFS5H600NLT1G features a low Rds(on) of 1.3 mΩ at 10V gate voltage, minimizing conduction losses.
- Compact Design: The device comes in a small footprint DFN-5 package, making it ideal for space-constrained applications.
- Low Qg and Capacitance: Low gate charge and capacitance reduce driver losses, enhancing overall efficiency.
- Pb-Free and RoHS Compliant: The MOSFET is lead-free and compliant with RoHS regulations, ensuring environmental sustainability.
- High Current Handling: With a maximum drain current of 250A, this MOSFET is suitable for high-power applications.
- Wide Operating Temperature Range: The device operates over a temperature range of -55°C to +150°C, making it versatile for various environments.
Applications
- Power Management: Ideal for power management in automotive, communication, computing, and consumer electronics.
- Switching Applications: Suitable for high-frequency switching applications due to its low on-resistance and fast switching times.
- Industrial Systems: Used in industrial control systems, motor drives, and power supplies where high current and low loss are critical.
- Renewable Energy Systems: Applicable in solar and wind power systems for efficient power conversion.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS5H600NLT1G?
The maximum drain-to-source voltage (Vdss) is 60V.
- What is the typical on-resistance of the NTMFS5H600NLT1G?
The typical on-resistance (Rds(on)) is 1.3 mΩ at 10V gate voltage.
- What is the maximum drain current of the NTMFS5H600NLT1G?
The maximum drain current (Id) is 250A.
- What is the operating temperature range of the NTMFS5H600NLT1G?
The operating temperature range is -55°C to +150°C.
- Is the NTMFS5H600NLT1G RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What is the package style of the NTMFS5H600NLT1G?
The package style is DFN-5.
- What are the typical turn-on and turn-off delay times of the NTMFS5H600NLT1G?
The typical turn-on delay time is 28 ns, and the typical turn-off delay time is 88 ns.
- What is the input capacitance of the NTMFS5H600NLT1G?
The input capacitance (Ciss) is 6680 pF.
- What are some common applications for the NTMFS5H600NLT1G?
Common applications include power management, switching applications, industrial systems, and renewable energy systems.
- How does the NTMFS5H600NLT1G minimize conduction losses?
The device minimizes conduction losses through its low on-resistance (Rds(on)).
