Overview
The NTMFS5C612NLT1G-UIL5, produced by onsemi, is a high-performance N-Channel power MOSFET designed for a variety of power management applications. This device is part of the NTMFS5C612NL series and is known for its compact footprint and low on-resistance, making it ideal for applications requiring high current handling and minimal conduction losses.
The MOSFET features a small DFN5 (5x6 mm) package, which is Pb-free and RoHS compliant, ensuring environmental sustainability and ease of integration into modern electronic designs. The device is optimized for high-power applications with its ability to handle high drain currents and voltages.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 235 | A |
| Continuous Drain Current (TC = 100°C) | ID | 166 | A |
| Power Dissipation (TC = 25°C) | PD | 167 | W |
| Pulsed Drain Current (TA = 25°C, tp = 10 μs) | IDM | 900 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +175 | °C |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 1.2 - 1.5 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Input Capacitance | CISS | 6660 | pF |
| Output Capacitance | COSS | 2953 | pF |
| Reverse Transfer Capacitance | CRSS | 45 | pF |
Key Features
- Compact Design: The NTMFS5C612NLT1G features a small footprint in a DFN5 (5x6 mm) package, ideal for space-constrained applications.
- Low On-Resistance: With a maximum RDS(on) of 1.5 mΩ at VGS = 10 V and ID = 50 A, this MOSFET minimizes conduction losses.
- Low QG and Capacitance: Low total gate charge (QG) and capacitance reduce driver losses and improve switching efficiency.
- Wettable Flank Option: The NTMFS5C612NLWF version offers a wettable flank for enhanced optical inspection.
- Pb-Free and RoHS Compliant: Ensures environmental sustainability and compliance with regulatory standards.
- High Current Handling: Capable of handling high continuous and pulsed drain currents, making it suitable for high-power applications.
Applications
- Power Management Systems: Ideal for DC-DC converters, power supplies, and other power management circuits.
- Automotive Systems: Suitable for automotive applications such as battery management, motor control, and power distribution.
- Industrial Control Systems: Used in industrial control systems, including motor drives, power inverters, and switching power supplies.
- Consumer Electronics: Applicable in high-power consumer electronics such as gaming consoles, servers, and high-end computing systems.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTMFS5C612NLT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 235 A.
- What is the typical on-resistance (RDS(on)) at VGS = 10 V and ID = 50 A?
The typical on-resistance (RDS(on)) at VGS = 10 V and ID = 50 A is 1.2 - 1.5 mΩ.
- Is the NTMFS5C612NLT1G Pb-free and RoHS compliant?
Yes, the NTMFS5C612NLT1G is Pb-free and RoHS compliant.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is −55 to +175°C.
- What is the maximum pulsed drain current (IDM) at TA = 25°C and tp = 10 μs?
The maximum pulsed drain current (IDM) at TA = 25°C and tp = 10 μs is 900 A.
- What are the key applications of the NTMFS5C612NLT1G?
The key applications include power management systems, automotive systems, industrial control systems, and consumer electronics.
- What is the input capacitance (CISS) of the NTMFS5C612NLT1G?
The input capacitance (CISS) is 6660 pF.
- Does the NTMFS5C612NLT1G have a wettable flank option?
Yes, the NTMFS5C612NLWF version offers a wettable flank for enhanced optical inspection.
- What is the gate threshold voltage (VGS(TH)) range?
The gate threshold voltage (VGS(TH)) range is 1.2 - 2.0 V.
