NTMFS5C404NLT1G
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onsemi NTMFS5C404NLT1G

Manufacturer No:
NTMFS5C404NLT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 52A/370A 5DFN
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The NTMFS5C404NLT1G is a high-performance N-channel power MOSFET manufactured by onsemi. This device is part of the NTMFS5 series and is designed for applications requiring high current handling and low on-resistance. The MOSFET features a small footprint of 5x6 mm, making it ideal for compact designs. It is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Parameter Value Unit
Drain-to-Source Voltage (VDSS) 40 V
Gate-to-Source Voltage (VGS) ±20 V
Continuous Drain Current (ID) at TC = 25°C 370 A
Maximum Operating Temperature (TJ) 175 °C
Minimum Operating Temperature (TJ) -55 °C
Drain-to-Source On Resistance (RDS(on)) at VGS = 10V 0.67 mΩ
Drain-to-Source On Resistance (RDS(on)) at VGS = 4.5V 1 mΩ
Gate Charge (QG) at VGS = 10V 181 nC nC
Package Type SO-8-FL (DFN5)
Power Dissipation (PD) at TC = 25°C 167 W W

Key Features

  • Small Footprint: The MOSFET has a compact design with a footprint of 5x6 mm, making it suitable for space-constrained applications.
  • Low RDS(on): The device features low on-resistance to minimize conduction losses, enhancing overall efficiency.
  • Low QG and Capacitance: Low gate charge and capacitance reduce driver losses, improving switching performance.
  • Environmental Compliance: The MOSFET is Pb-free, halogen-free, and RoHS compliant, ensuring it meets environmental and regulatory standards.

Applications

The NTMFS5C404NLT1G is suitable for a variety of high-current applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • High-power switching and amplification
  • Aerospace and automotive systems requiring high reliability and performance

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS5C404NLT1G?

    The maximum drain-to-source voltage (VDSS) is 40 V.

  2. What is the continuous drain current rating at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 370 A.

  3. What is the on-resistance (RDS(on)) at VGS = 10V?

    The on-resistance (RDS(on)) at VGS = 10V is 0.67 mΩ.

  4. Is the NTMFS5C404NLT1G RoHS compliant?

    Yes, the NTMFS5C404NLT1G is RoHS compliant, Pb-free, and halogen-free.

  5. What is the package type of the NTMFS5C404NLT1G?

    The package type is SO-8-FL (DFN5).

  6. What is the maximum operating junction temperature?

    The maximum operating junction temperature (TJ) is 175°C.

  7. What is the minimum operating temperature?

    The minimum operating temperature (TJ) is -55°C.

  8. What is the gate charge (QG) at VGS = 10V?

    The gate charge (QG) at VGS = 10V is 181 nC.

  9. What are the typical applications of the NTMFS5C404NLT1G?

    Typical applications include power supplies, DC-DC converters, motor control systems, and high-power switching and amplification.

  10. Is the NTMFS5C404NLT1G suitable for automotive and aerospace applications?

    Yes, it is suitable for automotive and aerospace applications due to its high reliability and performance.

  11. What is the power dissipation (PD) at TC = 25°C?

    The power dissipation (PD) at TC = 25°C is 167 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:52A (Ta), 370A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.75mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:181 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12168 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Same Series
NTMFS5C404NLT3G
NTMFS5C404NLT3G
MOSFET N-CH 40V 52A/370A 5DFN

Similar Products

Part Number NTMFS5C404NLT1G NTMFS5C604NLT1G NTMFS5C404NT1G NTMFS5C404NLTT1G NTMFS5C406NLT1G NTMFS5C404NLT3G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 60 V 40 V 40 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 52A (Ta), 370A (Tc) 38A (Ta) 53A (Ta), 378A (Tc) 52A (Ta), 370A (Tc) 53A (Ta), 362A (Tc) 52A (Ta), 370A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.75mOhm @ 50A, 10V 1.2mOhm @ 50A, 10V 0.7mOhm @ 50A, 10V 0.75mOhm @ 50A, 10V 0.7mOhm @ 50A, 10V 0.75mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 4V @ 250µA 2V @ 250µA 2V @ 280µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 181 nC @ 10 V 120 nC @ 10 V 128 nC @ 10 V 181 nC @ 10 V 149 nC @ 10 V 181 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12168 pF @ 25 V 8900 pF @ 25 V 8400 pF @ 25 V 12168 pF @ 25 V 9400 pF @ 20 V 12168 pF @ 25 V
FET Feature - - - - - -
Power Dissipation (Max) 3.2W (Ta), 167W (Tc) 3.9W (Ta), 200W (Tc) 3.9W (Ta), 200W (Tc) 3.9W (Ta), 200W (Tc) 3.9W (Ta), 179W (Tc) 3.2W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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