Overview
The NTMFS5C604NLT1G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. The MOSFET features a small footprint DFN5 package, making it ideal for compact and efficient designs. It is Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 276 | A |
| Continuous Drain Current (TJ = 100°C) | ID | 175 | A |
| Power Dissipation (TJ = 25°C) | PD | 167 | W |
| Power Dissipation (TJ = 100°C) | PD | 67 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 900 | A |
| Operating Junction and Storage Temperature | TJ, Tstg | −55 to +150 | °C |
| Source Current (Body Diode) | IS | 195 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 776 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| On-Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 0.93 - 1.2 | mΩ |
| On-Resistance (VGS = 4.5 V, ID = 50 A) | RDS(on) | 1.25 - 1.7 | mΩ |
Key Features
- Small Footprint: The DFN5 package measures 5x6 mm, ideal for compact designs.
- Low RDS(on): Minimizes conduction losses with on-resistance as low as 0.93 mΩ at VGS = 10 V and ID = 50 A.
- Low QG and Capacitance: Reduces driver losses with low total gate charge and capacitance.
- Pb-free and RoHS Compliant: Ensures environmental sustainability and compliance with regulatory standards.
- High Current Handling: Supports continuous drain currents up to 276 A at TJ = 25°C.
- Wide Operating Temperature Range: Operates from −55°C to +150°C.
Applications
- Power Supplies: Suitable for high-current power supply applications requiring low on-resistance and high efficiency.
- Motor Control: Ideal for motor drive applications due to its high current handling and low RDS(on).
- Industrial Automation: Used in various industrial automation systems where high power and efficiency are critical.
- Renewable Energy Systems: Applicable in solar and wind power systems for efficient power conversion.
- Automotive Systems: Suitable for automotive applications requiring high reliability and efficiency.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS5C604NLT1G?
The maximum drain-to-source voltage (VDSS) is 60 V.
- What is the continuous drain current at TJ = 25°C?
The continuous drain current (ID) at TJ = 25°C is 276 A.
- What is the on-resistance of the MOSFET at VGS = 10 V and ID = 50 A?
The on-resistance (RDS(on)) at VGS = 10 V and ID = 50 A is between 0.93 mΩ and 1.2 mΩ.
- Is the NTMFS5C604NLT1G Pb-free and RoHS compliant?
- What is the operating junction and storage temperature range of the MOSFET?
The operating junction and storage temperature range is from −55°C to +150°C.
- What is the maximum power dissipation at TJ = 25°C?
The maximum power dissipation (PD) at TJ = 25°C is 167 W.
- What is the pulsed drain current for a pulse width of 10 μs?
The pulsed drain current (IDM) for a pulse width of 10 μs is 900 A.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes (TL) is 260°C.
- What are the typical applications of the NTMFS5C604NLT1G?
The typical applications include power supplies, motor control, industrial automation, renewable energy systems, and automotive systems.
- What is the package type of the NTMFS5C604NLT1G?
The package type is DFN5 (5x6 mm).
