NTMFS4H01NT1G
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onsemi NTMFS4H01NT1G

Manufacturer No:
NTMFS4H01NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 54A/334A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4H01NT1G is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed for a wide range of applications requiring high current handling and low on-resistance. It features a 5-DFN (5x6) package, making it suitable for space-constrained designs while maintaining high thermal performance.

Key Specifications

ParameterValue
Channel ModeEnhancement
Vds (Drain-Source Voltage)25 V
Id (Continuous Drain Current)54 A (Ta), 334 A (Tc)
Pd (Power Dissipation)3.2 W (Ta), 125 W (Tc)
Tj (Junction Temperature)-55°C to +150°C
Package Type5-DFN (5x6)

Key Features

  • High current handling capability with continuous drain current of 54 A (Ta) and 334 A (Tc)
  • Low on-resistance for efficient power handling
  • Wide operating temperature range from -55°C to +150°C
  • Compact 5-DFN (5x6) package for space-efficient designs
  • High thermal performance

Applications

The NTMFS4H01NT1G is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Automotive systems requiring high reliability and thermal performance
  • Industrial power management systems
  • High-frequency switching applications

Q & A

  1. What is the maximum drain-source voltage of the NTMFS4H01NT1G?
    The maximum drain-source voltage (Vds) is 25 V.
  2. What is the continuous drain current rating of the NTMFS4H01NT1G?
    The continuous drain current (Id) is 54 A at ambient temperature (Ta) and 334 A at case temperature (Tc).
  3. What is the power dissipation of the NTMFS4H01NT1G?
    The power dissipation (Pd) is 3.2 W at ambient temperature (Ta) and 125 W at case temperature (Tc).
  4. What is the operating temperature range of the NTMFS4H01NT1G?
    The operating temperature range is from -55°C to +150°C.
  5. What package type does the NTMFS4H01NT1G use?
    The NTMFS4H01NT1G uses a 5-DFN (5x6) package.
  6. What are some typical applications for the NTMFS4H01NT1G?
    Typical applications include power supplies, DC-DC converters, motor control systems, automotive systems, and industrial power management.
  7. Is the NTMFS4H01NT1G suitable for high-frequency switching applications?
    Yes, it is suitable for high-frequency switching applications due to its low on-resistance and high thermal performance.
  8. Where can I find detailed specifications for the NTMFS4H01NT1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser, Digi-Key, and Avnet.
  9. What is the channel mode of the NTMFS4H01NT1G?
    The channel mode is Enhancement.
  10. Is the NTMFS4H01NT1G available in original stock?
    Yes, it is available in original stock from various suppliers, including Ovaga Technologies.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:54A (Ta), 334A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5693 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 125W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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In Stock

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Same Series
NTMFS4H01NT3G
NTMFS4H01NT3G
MOSFET N-CH 25V 54A/334A 5DFN

Similar Products

Part Number NTMFS4H01NT1G NTMFS4H01NT3G NTMFS4H02NT1G NTMFS4C01NT1G NTMFS4H01NFT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V 25 V 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 54A (Ta), 334A (Tc) 54A (Ta), 334A (Tc) 37A (Ta), 193A (Tc) 47A (Ta), 303A (Tc) 54A (Ta), 334A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.7mOhm @ 30A, 10V 0.7mOhm @ 30A, 10V 1.4mOhm @ 30A, 10V 0.9mOhm @ 30A, 10V 0.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA 2.2V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 85 nC @ 10 V 85 nC @ 10 V 38.5 nC @ 10 V 139 nC @ 10 V 82 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5693 pF @ 12 V 5693 pF @ 12 V 2651 pF @ 12 V 10144 pF @ 15 V 5538 pF @ 12 V
FET Feature - - - - -
Power Dissipation (Max) 3.2W (Ta), 125W (Tc) 3.2W (Ta), 125W (Tc) 3.13W (Ta), 83W (Tc) 3.2W (Ta), 134W (Tc) 3.2W (Ta), 125W (Tc)
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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