Overview
The NTMFS4C09NBT1G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for applications requiring low on-resistance and high current handling capabilities. It features a robust SO-8FL package, making it suitable for a variety of power management and switching applications. The MOSFET is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Maximum Drain Current | ID | 52 | A |
| Maximum Junction Temperature | TJ | 150 | °C |
| Maximum Drain-Source On-State Resistance | RDS(ON) | 5.8 mΩ @ VGS = 10 V | mΩ |
| Total Gate Charge | Qg | 10.9 nC | nC |
| Rise Time | tr | 32 ns | ns |
| Output Capacitance | Coss | 610 pF | pF |
| Package | SO-8FL |
Key Features
- Low RDS(ON) to minimize conduction losses
- Low capacitance to minimize driver losses
- Optimized gate charge to minimize switching losses
- Pb-free, halogen-free, and RoHS compliant
- High current handling capability up to 52 A
- Maximum drain-source voltage of 30 V
Applications
- CPU power delivery
- DC-DC converters
- Power management in various electronic devices
- High-performance switching applications
Q & A
- What is the maximum drain-source voltage of the NTMFS4C09NBT1G MOSFET?
The maximum drain-source voltage is 30 V.
- What is the maximum drain current of the NTMFS4C09NBT1G MOSFET?
The maximum drain current is 52 A.
- What is the typical on-state resistance of the NTMFS4C09NBT1G MOSFET?
The typical on-state resistance is 5.8 mΩ at VGS = 10 V.
- Is the NTMFS4C09NBT1G MOSFET RoHS compliant?
- What is the package type of the NTMFS4C09NBT1G MOSFET?
The package type is SO-8FL.
- What are some common applications of the NTMFS4C09NBT1G MOSFET?
- What is the maximum junction temperature of the NTMFS4C09NBT1G MOSFET?
The maximum junction temperature is 150°C.
- What is the total gate charge of the NTMFS4C09NBT1G MOSFET?
The total gate charge is 10.9 nC.
- What is the rise time of the NTMFS4C09NBT1G MOSFET?
The rise time is 32 ns.
- What is the output capacitance of the NTMFS4C09NBT1G MOSFET?
The output capacitance is 610 pF.
