NTMFS4C06NBT1G
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onsemi NTMFS4C06NBT1G

Manufacturer No:
NTMFS4C06NBT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 20A/69A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4C06NBT1G is a power MOSFET from onsemi, designed as a single N-channel device in an SO-8 FL package. This MOSFET is optimized for high-performance applications, offering low on-resistance (RDS(on)), low capacitance, and optimized gate charge to minimize conduction, driver, and switching losses. It is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS30V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TA = 25°C)ID20.0A
Continuous Drain Current (TA = 80°C)ID14.9A
Power Dissipation (TA = 25°C)PD2.55W
Junction-to-Case Thermal ResistanceRJC4.1°C/W
Junction-to-Ambient Thermal Resistance (Steady State)RJA49°C/W
On-Resistance (RDS(on)) at VGS = 10 VRDS(on)4.0 mΩ
On-Resistance (RDS(on)) at VGS = 4.5 VRDS(on)6.0 mΩ
Total Gate ChargeQG(TOT)26 nC at VGS = 10 V, VDS = 15 V; ID = 30 A

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-free, halogen-free, and RoHS compliant

Applications

  • CPU Power Delivery
  • DC-DC Converters

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4C06NBT1G MOSFET? The maximum drain-to-source voltage (VDSS) is 30 V.
  2. What is the continuous drain current at 25°C? The continuous drain current at 25°C is 20.0 A.
  3. What is the power dissipation at 25°C? The power dissipation at 25°C is 2.55 W.
  4. What are the thermal resistance values for this MOSFET? The junction-to-case thermal resistance (RJC) is 4.1 °C/W, and the junction-to-ambient thermal resistance (RJA) is 49 °C/W for steady state conditions.
  5. What are the typical on-resistance values? The on-resistance (RDS(on)) is 4.0 mΩ at VGS = 10 V and 6.0 mΩ at VGS = 4.5 V.
  6. Is the NTMFS4C06NBT1G MOSFET environmentally friendly? Yes, it is Pb-free, halogen-free, and RoHS compliant.
  7. What are the common applications for this MOSFET? Common applications include CPU Power Delivery and DC-DC Converters.
  8. What is the maximum gate-to-source voltage? The maximum gate-to-source voltage (VGS) is ±20 V.
  9. What is the total gate charge at VGS = 10 V? The total gate charge (QG(TOT)) at VGS = 10 V, VDS = 15 V, and ID = 30 A is 26 nC.
  10. What is the lead temperature for soldering purposes? The lead temperature for soldering purposes is 260 °C for 10 seconds (1/8″ from case).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1683 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.55W (Ta), 30.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Package / Case:8-PowerTDFN, 5 Leads
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Similar Products

Part Number NTMFS4C06NBT1G NTMFS4C06NT1G NTMFS4C06NBT3G
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 69A (Tc) 11A (Ta), 69A (Tc) 20A (Ta), 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 30A, 10V 4mOhm @ 30A, 10V 4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V 26 nC @ 10 V 26 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1683 pF @ 15 V 1683 pF @ 15 V 1683 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.55W (Ta), 30.5W (Tc) 770mW (Ta), 30.5W (Tc) 2.55W (Ta), 30.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads

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