NTMFS4983NBFT1G
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onsemi NTMFS4983NBFT1G

Manufacturer No:
NTMFS4983NBFT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 22A/106A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTMFS4983NBFT1G is a high-performance power MOSFET produced by onsemi. This single N-channel MOSFET is designed for high-current applications and features a robust set of characteristics that make it suitable for various power management and switching roles. The device is housed in an SO-8 FL package, which is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and reliability.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS30V
Gate-to-Source VoltageVGS±20V
Continuous Drain Current (TA = 25°C)ID106A
Continuous Drain Current (TA = 85°C)ID22A
Power Dissipation (RJA, TA = 25°C)PD54W
Drain to Source dV/dtdV/dt6V/ns
Single Pulse Drain-to-Source Avalanche EnergyEAS101mJ
Lead Temperature for Soldering PurposesTL260°C
Junction-to-Case Thermal ResistanceRJC3.3°C/W
Junction-to-Ambient Thermal Resistance (Steady State)RJA40°C/W
Gate Threshold VoltageVGS(TH)-V
On-Resistance (RDS(on)) at VGS = 10 VRDS(on)2.1 mΩ

Key Features

  • Integrated Schottky Diode to enhance performance and reduce losses.
  • Low RDS(on) to minimize conduction losses.
  • Low capacitance to minimize driver losses.
  • Optimized gate charge to minimize switching losses.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.

Applications

  • CPU Power Delivery: Suitable for high-current power delivery in CPU applications.
  • Synchronous Rectification for DC-DC Converters: Ideal for efficient rectification in DC-DC converter designs.
  • Low Side Switching: Used in low-side switching applications where high current handling is required.
  • Telecom Secondary Side Rectification: Applicable in telecom systems for secondary side rectification.

Q & A

  1. What is the maximum drain-to-source voltage of the NTMFS4983NBFT1G?
    The maximum drain-to-source voltage (VDSS) is 30 V.
  2. What is the continuous drain current at 25°C and 85°C?
    The continuous drain current is 106 A at 25°C and 22 A at 85°C.
  3. What is the on-resistance (RDS(on)) of the MOSFET at VGS = 10 V?
    The on-resistance (RDS(on)) is 2.1 mΩ at VGS = 10 V.
  4. Is the NTMFS4983NBFT1G Pb-free and RoHS compliant?
    Yes, the device is Pb-free, halogen-free, and RoHS compliant.
  5. What are the typical applications of the NTMFS4983NBFT1G?
    The device is typically used in CPU power delivery, synchronous rectification for DC-DC converters, low side switching, and telecom secondary side rectification.
  6. What is the junction-to-case thermal resistance of the MOSFET?
    The junction-to-case thermal resistance (RJC) is 3.3 °C/W.
  7. What is the maximum single pulse drain-to-source avalanche energy?
    The maximum single pulse drain-to-source avalanche energy (EAS) is 101 mJ.
  8. What is the lead temperature for soldering purposes?
    The lead temperature for soldering purposes is 260 °C.
  9. Does the MOSFET have an integrated Schottky diode?
    Yes, the MOSFET has an integrated Schottky diode.
  10. What package type is the NTMFS4983NBFT1G available in?
    The device is available in an SO-8 FL package.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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