Overview
The NTMFS4983NBFT1G is a high-performance power MOSFET produced by onsemi. This single N-channel MOSFET is designed for high-current applications and features a robust set of characteristics that make it suitable for various power management and switching roles. The device is housed in an SO-8 FL package, which is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and reliability.
Key Specifications
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-to-Source Voltage | VDSS | 30 | V |
Gate-to-Source Voltage | VGS | ±20 | V |
Continuous Drain Current (TA = 25°C) | ID | 106 | A |
Continuous Drain Current (TA = 85°C) | ID | 22 | A |
Power Dissipation (RJA, TA = 25°C) | PD | 54 | W |
Drain to Source dV/dt | dV/dt | 6 | V/ns |
Single Pulse Drain-to-Source Avalanche Energy | EAS | 101 | mJ |
Lead Temperature for Soldering Purposes | TL | 260 | °C |
Junction-to-Case Thermal Resistance | RJC | 3.3 | °C/W |
Junction-to-Ambient Thermal Resistance (Steady State) | RJA | 40 | °C/W |
Gate Threshold Voltage | VGS(TH) | - | V |
On-Resistance (RDS(on)) at VGS = 10 V | RDS(on) | 2.1 mΩ | mΩ |
Key Features
- Integrated Schottky Diode to enhance performance and reduce losses.
- Low RDS(on) to minimize conduction losses.
- Low capacitance to minimize driver losses.
- Optimized gate charge to minimize switching losses.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Applications
- CPU Power Delivery: Suitable for high-current power delivery in CPU applications.
- Synchronous Rectification for DC-DC Converters: Ideal for efficient rectification in DC-DC converter designs.
- Low Side Switching: Used in low-side switching applications where high current handling is required.
- Telecom Secondary Side Rectification: Applicable in telecom systems for secondary side rectification.
Q & A
- What is the maximum drain-to-source voltage of the NTMFS4983NBFT1G?
The maximum drain-to-source voltage (VDSS) is 30 V. - What is the continuous drain current at 25°C and 85°C?
The continuous drain current is 106 A at 25°C and 22 A at 85°C. - What is the on-resistance (RDS(on)) of the MOSFET at VGS = 10 V?
The on-resistance (RDS(on)) is 2.1 mΩ at VGS = 10 V. - Is the NTMFS4983NBFT1G Pb-free and RoHS compliant?
Yes, the device is Pb-free, halogen-free, and RoHS compliant. - What are the typical applications of the NTMFS4983NBFT1G?
The device is typically used in CPU power delivery, synchronous rectification for DC-DC converters, low side switching, and telecom secondary side rectification. - What is the junction-to-case thermal resistance of the MOSFET?
The junction-to-case thermal resistance (RJC) is 3.3 °C/W. - What is the maximum single pulse drain-to-source avalanche energy?
The maximum single pulse drain-to-source avalanche energy (EAS) is 101 mJ. - What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260 °C. - Does the MOSFET have an integrated Schottky diode?
Yes, the MOSFET has an integrated Schottky diode. - What package type is the NTMFS4983NBFT1G available in?
The device is available in an SO-8 FL package.