Overview
The NTLUS3A18PZTAGHW is a single P-Channel power MOSFET produced by onsemi. This device is packaged in a UDFN (Ultra Dual Flat No-Lead) package, measuring 2.0x2.0x0.55 mm, which is ideal for space-saving designs. It is designed to offer high performance and reliability in various power management applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | V |
| Gate-to-Source Voltage | VGS | ±8.0 | V |
| Continuous Drain Current | ID | -8.2 | A |
| On-Resistance (RDS(on)) | RDS(on) | 25 mΩ @ -4.5 V, -8.2 A | mΩ |
| Junction-to-Ambient Thermal Resistance (Steady State) | RθJA | 72 | °C/W |
Key Features
- UDFN package with exposed drain pads for excellent thermal conduction
- Low profile UDFN 2.0x2.0x0.55 mm for board space saving
- Ultra low RDS(on)
- ESD diode-protected gate
- Pb-free, halogen-free/BFR-free, and RoHS compliant
Applications
- Optimized for power management applications in portable products such as cell phones, media tablets, PMP, DSC, GPS, and others
- Battery switch
- High side load switch
Q & A
- What is the package type of the NTLUS3A18PZTAGHW MOSFET?
The NTLUS3A18PZTAGHW is packaged in a UDFN (Ultra Dual Flat No-Lead) package.
- What are the dimensions of the UDFN package?
The UDFN package measures 2.0x2.0x0.55 mm.
- What is the maximum drain-to-source voltage (VDSS) of the NTLUS3A18PZTAGHW?
The maximum drain-to-source voltage (VDSS) is -20 V.
- What is the continuous drain current (ID) rating of the NTLUS3A18PZTAGHW?
The continuous drain current (ID) rating is -8.2 A.
- What is the on-resistance (RDS(on)) of the NTLUS3A18PZTAGHW?
The on-resistance (RDS(on)) is 25 mΩ @ -4.5 V, -8.2 A.
- Is the NTLUS3A18PZTAGHW ESD protected?
- What are the typical applications of the NTLUS3A18PZTAGHW?
It is optimized for power management in portable products, battery switches, and high side load switches.
- Is the NTLUS3A18PZTAGHW RoHS compliant?
- What is the junction-to-ambient thermal resistance (RθJA) of the NTLUS3A18PZTAGHW?
The junction-to-ambient thermal resistance (RθJA) is 72 °C/W.
- How does the UDFN package contribute to thermal performance?
The UDFN package has exposed drain pads for excellent thermal conduction.
