NTLJS3113PT1G
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onsemi NTLJS3113PT1G

Manufacturer No:
NTLJS3113PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.5A 6WDFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTLJS3113PT1G is a power MOSFET from onsemi, designed as a single P-channel device in a WDFN6 package. This component is notable for its low on-resistance and high current handling capabilities, making it suitable for various power management applications. The device features an exposed drain pad for excellent thermal conduction and is packaged in a compact 2x2 mm footprint, similar to the SC-88 package. It is also RoHS compliant, Pb-free, and halogen-free, ensuring environmental sustainability.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-20V
Gate-to-Source VoltageVGS±8.0V
Continuous Drain Current (TA = 25°C)ID-5.8A
Continuous Drain Current (TA = 85°C)ID-4.4A
Pulsed Drain Current (tp = 10 μs)IDM-23A
Power Dissipation (TA = 25°C)PD1.9W
On-Resistance (VGS = -4.5 V, ID = -3.0 A)RDS(on)32-40
Junction-to-Ambient Thermal ResistanceRθJA65°C/W
Operating Junction and Storage TemperatureTJ, TSTG-55 to 150°C

Key Features

  • Low on-resistance (RDS(on)) solution in a 2x2 mm package.
  • Exposed drain pad for excellent thermal conduction.
  • Compact 2x2 mm footprint, similar to SC-88 package.
  • Low profile (< 0.8 mm) for easy fit in thin environments.
  • Pb-free, halogen-free, and RoHS compliant.
  • 1.5 V RDS(on) rating for operation at low voltage logic level gate drive.

Applications

  • DC-DC converters (buck and boost circuits).
  • Battery and load management applications in portable equipment such as cell phones, PDAs, media players, etc.
  • High side load switch.

Q & A

  1. What is the maximum drain-to-source voltage of the NTLJS3113PT1G?
    The maximum drain-to-source voltage is -20 V.
  2. What is the continuous drain current at 25°C and 85°C?
    The continuous drain current is -5.8 A at 25°C and -4.4 A at 85°C.
  3. What is the on-resistance of the MOSFET at VGS = -4.5 V and ID = -3.0 A?
    The on-resistance is 32-40 mΩ.
  4. What is the junction-to-ambient thermal resistance?
    The junction-to-ambient thermal resistance is 65 °C/W.
  5. What are the operating and storage temperature ranges?
    The operating and storage temperature ranges are -55 to 150 °C.
  6. Is the NTLJS3113PT1G RoHS compliant?
    Yes, the device is RoHS compliant, Pb-free, and halogen-free.
  7. What are the typical applications of the NTLJS3113PT1G?
    The typical applications include DC-DC converters, battery and load management in portable equipment, and high side load switches.
  8. What is the package type and footprint of the NTLJS3113PT1G?
    The package type is WDFN6 with a 2x2 mm footprint.
  9. What is the maximum pulsed drain current?
    The maximum pulsed drain current is -23 A for a pulse width of 10 μs.
  10. What is the power dissipation at 25°C?
    The power dissipation is 1.9 W at 25°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15.7 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1329 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-WDFN (2x2)
Package / Case:6-WDFN Exposed Pad
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In Stock

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Same Series
NTLJS3113PTAG
NTLJS3113PTAG
MOSFET P-CH 20V 3.5A 6WDFN

Similar Products

Part Number NTLJS3113PT1G NTLJS3113PTAG
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta) 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 40mOhm @ 3A, 4.5V 40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15.7 nC @ 4.5 V 15.7 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1329 pF @ 16 V 1329 pF @ 16 V
FET Feature - -
Power Dissipation (Max) 700mW (Ta) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WDFN (2x2) 6-WDFN (2x2)
Package / Case 6-WDFN Exposed Pad 6-WDFN Exposed Pad

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