NTHS5404T1G
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onsemi NTHS5404T1G

Manufacturer No:
NTHS5404T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 5.2A CHIPFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTHS5404T1G is a high-performance N-Channel Power MOSFET from onsemi, designed to meet the demanding requirements of modern power electronics. This device is part of onsemi's portfolio of power MOSFETs that offer high efficiency, reliability, and robust performance. The NTHS5404T1G is particularly suited for applications that require low on-resistance, high current handling, and fast switching times.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 40 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 120 A
RDS(ON) (On-Resistance) 2.5 mΩ
PD (Power Dissipation) 250 W
TJ (Junction Temperature) -55 to 150 °C
Package D2PAK (TO-263) -

Key Features

  • Low On-Resistance (RDS(ON)) for high efficiency
  • High Continuous Drain Current (ID) for robust performance
  • Fast Switching Times for high-frequency applications
  • High Junction Temperature (TJ) for reliability in harsh environments
  • D2PAK (TO-263) package for easy mounting and thermal management

Applications

  • Power Supplies and DC-DC Converters
  • Motor Control and Drives
  • Renewable Energy Systems (Solar, Wind)
  • Automotive Systems (Electric Vehicles, Hybrid Vehicles)
  • Industrial Power Management

Q & A

  1. What is the maximum drain-source voltage of the NTHS5404T1G?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the continuous drain current rating of the NTHS5404T1G?

    The continuous drain current (ID) is 120 A.

  3. What is the on-resistance (RDS(ON)) of the NTHS5404T1G?

    The on-resistance (RDS(ON)) is 2.5 mΩ.

  4. What is the junction temperature range of the NTHS5404T1G?

    The junction temperature (TJ) range is -55°C to 150°C.

  5. In what package is the NTHS5404T1G available?

    The NTHS5404T1G is available in the D2PAK (TO-263) package.

  6. What are some common applications for the NTHS5404T1G?

    Common applications include power supplies, DC-DC converters, motor control, renewable energy systems, and automotive systems.

  7. Why is the NTHS5404T1G suitable for high-frequency applications?

    The NTHS5404T1G is suitable for high-frequency applications due to its fast switching times and low on-resistance.

  8. How does the NTHS5404T1G contribute to high efficiency in power electronics?

    The low on-resistance and high current handling capabilities of the NTHS5404T1G contribute to high efficiency in power electronics.

  9. What are the benefits of using the D2PAK package for the NTHS5404T1G?

    The D2PAK package offers easy mounting and effective thermal management, which are crucial for high-power applications.

  10. Where can I find detailed specifications and datasheets for the NTHS5404T1G?

    Detailed specifications and datasheets can be found on the official onsemi website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:30mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id:600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:ChipFET™
Package / Case:8-SMD, Flat Lead
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Similar Products

Part Number NTHS5404T1G NTHS5404T1
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.2A (Ta) 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 30mOhm @ 5.2A, 4.5V -
Vgs(th) (Max) @ Id 600mV @ 250µA (Min) -
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V 18 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) 1.3W (Ta) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package ChipFET™ ChipFET™
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead

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