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NTGS3443T1G
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onsemi NTGS3443T1G

Manufacturer No:
NTGS3443T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 2.2A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTGS3443T1G is a P-Channel Power MOSFET produced by onsemi. This device is designed for high-performance applications requiring low on-resistance and high current handling. The MOSFET is packaged in a TSOP-6 (SOT-23-6) package, making it suitable for space-constrained designs. It is known for its robust electrical characteristics and reliability, making it a popular choice in various electronic systems.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-20 V
ID (Continuous Drain Current)-4.4 A
RDS(ON) (On-Resistance)Typically 35 mΩ at VGS = -10 V, ID = -4 A
VGS(th) (Threshold Voltage)Typically -1 to -2 V
PD (Power Dissipation)1 W
PackageTSOP-6 (SOT-23-6)

Key Features

  • Low On-Resistance: The NTGS3443T1G features a low RDS(ON) of typically 35 mΩ, which minimizes power losses and enhances efficiency.
  • High Current Handling: With a continuous drain current of -4.4 A, this MOSFET is capable of handling high current applications.
  • Compact Package: The TSOP-6 package is ideal for space-constrained designs, offering a balance between performance and size.
  • Robust Electrical Characteristics: The device is designed to provide reliable performance across a range of operating conditions.

Applications

The NTGS3443T1G is suitable for a variety of applications, including but not limited to:

  • Power Management: DC-DC converters, voltage regulators, and power supplies.
  • Motor Control: Brushless DC motor drives and other motor control circuits.
  • Automotive Systems: Various automotive applications requiring high reliability and performance.
  • Consumer Electronics: Portable electronics, audio amplifiers, and other consumer devices.

Q & A

  1. What is the maximum drain-source voltage of the NTGS3443T1G?
    The maximum drain-source voltage (VDS) is -20 V.
  2. What is the typical on-resistance of the NTGS3443T1G?
    The typical on-resistance (RDS(ON)) is 35 mΩ at VGS = -10 V, ID = -4 A.
  3. What is the continuous drain current rating of the NTGS3443T1G?
    The continuous drain current (ID) is -4.4 A.
  4. What package type is the NTGS3443T1G available in?
    The NTGS3443T1G is available in a TSOP-6 (SOT-23-6) package.
  5. What is the power dissipation rating of the NTGS3443T1G?
    The power dissipation (PD) is 1 W.
  6. What are some common applications for the NTGS3443T1G?
    Common applications include power management, motor control, automotive systems, and consumer electronics.
  7. What is the threshold voltage range of the NTGS3443T1G?
    The threshold voltage (VGS(th)) typically ranges from -1 to -2 V.
  8. Is the NTGS3443T1G RoHS compliant?
    Yes, the NTGS3443T1G is RoHS compliant.
  9. Where can I find detailed specifications for the NTGS3443T1G?
    Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and TME.
  10. What are the benefits of using the NTGS3443T1G in my design?
    The benefits include low on-resistance, high current handling, compact packaging, and robust electrical characteristics, which enhance efficiency and reliability in various applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:565 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number NTGS3443T1G NTGS3446T1G NTGS3443T2G NTGS3433T1G NTGS3441T1G NTGS3443BT1G NTGS3443T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active Obsolete Obsolete
FET Type P-Channel N-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 12 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 2.5A (Ta) 2.2A (Ta) 2.35A (Ta) 1.65A (Ta) 2.7A (Ta) 2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 65mOhm @ 4.4A, 4.5V 45mOhm @ 5.1A, 4.5V 65mOhm @ 4.4A, 4.5V 75mOhm @ 3.3A, 4.5V 90mOhm @ 3.3A, 4.5V 60mOhm @ 3.7A, 4.5V 65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.2V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.4V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 15 nC @ 4.5 V 15 nC @ 4.5 V 15 nC @ 4.5 V 14 nC @ 4.5 V 11 nC @ 4.5 V 15 nC @ 4.5 V
Vgs (Max) ±12V ±12V ±12V ±8V ±8V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 565 pF @ 5 V 750 pF @ 10 V 565 pF @ 5 V 550 pF @ 5 V 480 pF @ 5 V 819 pF @ 10 V 565 pF @ 5 V
FET Feature - - - - - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta) 500mW (Ta) 500mW (Ta) 700mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP 6-TSOP 6-TSOP 6-TSOP 6-TSOP 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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