Overview
The NVGS3443T1G is a P-Channel power MOSFET produced by onsemi, designed for high-efficiency power management in various applications. This device is part of the NTGS3443 and NVGS3443 series, which are known for their ultra-low RDS(on) and high current handling capabilities. The NVGS3443T1G is packaged in a miniature TSOP-6 surface mount package, making it ideal for space-constrained designs. It is Pb-free and RoHS compliant, and the NVGS prefix indicates that it meets unique site and control change requirements, including AEC-Q101 qualification and PPAP capability.
Key Specifications
Characteristic | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain-to-Source Voltage | VDSS | -20 | - | - | Volts |
Gate-to-Source Voltage - Continuous | VGS | -12 | - | - | Volts |
Thermal Resistance Junction-to-Ambient | - | - | - | - | °C/W |
Total Power Dissipation @ TA = 25°C | - | - | - | - | Watts |
Maximum Lead Temperature for Soldering Purposes | TL | - | - | 260 | °C |
Gate Threshold Voltage | VGS(th) | -0.60 | -0.95 | -1.50 | Volts |
Static Drain-Source On-State Resistance | RDS(on) | - | 0.065 | 0.100 | Ohms |
Forward Transconductance | gFS | - | 8.8 | - | mhos |
Input Capacitance | Ciss | - | 565 | - | pF |
Output Capacitance | Coss | - | 320 | - | pF |
Reverse Transfer Capacitance | Crss | - | 120 | - | pF |
Key Features
- Ultra Low RDS(on) for higher efficiency and extended battery life.
- Miniature TSOP-6 surface mount package for space-constrained designs.
- Pb-free and RoHS compliant.
- AEC-Q101 qualified and PPAP capable, indicated by the NVGS prefix.
- High current handling capability of up to 4.4 Amps.
- Low gate threshold voltage for easy switching.
- High forward transconductance for better control over the device.
Applications
The NVGS3443T1G is suitable for power management in portable and battery-powered products, such as cellular and cordless telephones, PCMCIA cards, and other devices requiring efficient power handling.
Q & A
- What is the maximum drain-to-source voltage of the NVGS3443T1G? The maximum drain-to-source voltage (VDSS) is -20 Volts.
- What is the typical on-state resistance (RDS(on)) of the NVGS3443T1G? The typical on-state resistance is 0.065 Ohms.
- What is the package type of the NVGS3443T1G? The device is packaged in a TSOP-6 surface mount package.
- Is the NVGS3443T1G RoHS compliant? Yes, the NVGS3443T1G is Pb-free and RoHS compliant.
- What are the key applications of the NVGS3443T1G? It is used in power management for portable and battery-powered products like cellular phones and PCMCIA cards.
- What is the maximum current handling capability of the NVGS3443T1G? The device can handle up to 4.4 Amps.
- Is the NVGS3443T1G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the gate threshold voltage range of the NVGS3443T1G? The gate threshold voltage (VGS(th)) ranges from -0.60 to -1.50 Volts.
- What is the forward transconductance of the NVGS3443T1G? The forward transconductance (gFS) is typically 8.8 mhos.
- What are the thermal characteristics of the NVGS3443T1G? The device has a maximum lead temperature for soldering purposes of 260°C.