NVGS3443T1G
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onsemi NVGS3443T1G

Manufacturer No:
NVGS3443T1G
Manufacturer:
onsemi
Package:
Bulk
Description:
SINGLE P-CHANNEL POWER MOSFET -2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVGS3443T1G is a P-Channel power MOSFET produced by onsemi, designed for high-efficiency power management in various applications. This device is part of the NTGS3443 and NVGS3443 series, which are known for their ultra-low RDS(on) and high current handling capabilities. The NVGS3443T1G is packaged in a miniature TSOP-6 surface mount package, making it ideal for space-constrained designs. It is Pb-free and RoHS compliant, and the NVGS prefix indicates that it meets unique site and control change requirements, including AEC-Q101 qualification and PPAP capability.

Key Specifications

CharacteristicSymbolMinTypMaxUnit
Drain-to-Source VoltageVDSS-20--Volts
Gate-to-Source Voltage - ContinuousVGS-12--Volts
Thermal Resistance Junction-to-Ambient----°C/W
Total Power Dissipation @ TA = 25°C----Watts
Maximum Lead Temperature for Soldering PurposesTL--260°C
Gate Threshold VoltageVGS(th)-0.60-0.95-1.50Volts
Static Drain-Source On-State ResistanceRDS(on)-0.0650.100Ohms
Forward TransconductancegFS-8.8-mhos
Input CapacitanceCiss-565-pF
Output CapacitanceCoss-320-pF
Reverse Transfer CapacitanceCrss-120-pF

Key Features

  • Ultra Low RDS(on) for higher efficiency and extended battery life.
  • Miniature TSOP-6 surface mount package for space-constrained designs.
  • Pb-free and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable, indicated by the NVGS prefix.
  • High current handling capability of up to 4.4 Amps.
  • Low gate threshold voltage for easy switching.
  • High forward transconductance for better control over the device.

Applications

The NVGS3443T1G is suitable for power management in portable and battery-powered products, such as cellular and cordless telephones, PCMCIA cards, and other devices requiring efficient power handling.

Q & A

  1. What is the maximum drain-to-source voltage of the NVGS3443T1G? The maximum drain-to-source voltage (VDSS) is -20 Volts.
  2. What is the typical on-state resistance (RDS(on)) of the NVGS3443T1G? The typical on-state resistance is 0.065 Ohms.
  3. What is the package type of the NVGS3443T1G? The device is packaged in a TSOP-6 surface mount package.
  4. Is the NVGS3443T1G RoHS compliant? Yes, the NVGS3443T1G is Pb-free and RoHS compliant.
  5. What are the key applications of the NVGS3443T1G? It is used in power management for portable and battery-powered products like cellular phones and PCMCIA cards.
  6. What is the maximum current handling capability of the NVGS3443T1G? The device can handle up to 4.4 Amps.
  7. Is the NVGS3443T1G AEC-Q101 qualified? Yes, it is AEC-Q101 qualified and PPAP capable.
  8. What is the gate threshold voltage range of the NVGS3443T1G? The gate threshold voltage (VGS(th)) ranges from -0.60 to -1.50 Volts.
  9. What is the forward transconductance of the NVGS3443T1G? The forward transconductance (gFS) is typically 8.8 mhos.
  10. What are the thermal characteristics of the NVGS3443T1G? The device has a maximum lead temperature for soldering purposes of 260°C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:65mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:15 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:565 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
NVGS3443T1G
NVGS3443T1G
SINGLE P-CHANNEL POWER MOSFET -2
NTGS3443T1
NTGS3443T1
MOSFET P-CH 20V 2.2A 6TSOP
NTGS3443T2G
NTGS3443T2G
MOSFET P-CH 20V 2.2A 6TSOP

Similar Products

Part Number NVGS3443T1G NVGS3441T1G
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.1A (Ta) 1.65A (Ta)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 65mOhm @ 4.4A, 4.5V 90mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 4.5 V 14 nC @ 4.5 V
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds 565 pF @ 5 V 480 pF @ 5 V
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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