Overview
The NTGS3446T1G is a single N-Channel Power MOSFET produced by onsemi, designed for high-efficiency power management in various applications. This device is packaged in a TSOP-6 case and is known for its ultra-low RDS(on) and logic level gate drive, making it suitable for battery-powered and portable devices. Although the device is currently discontinued and not recommended for new designs, it remains relevant for existing projects and legacy systems.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 20 | V |
| Gate-to-Source Voltage | VGS | ±12 | V |
| Continuous Drain Current @ TA = 25°C | ID | 5.1 | A |
| Pulsed Drain Current (tp ≤ 10 μs) | IDM | 20 | A |
| Thermal Resistance Junction-to-Ambient | RJA | 62.5 | °C/W |
| Total Power Dissipation @ TA = 25°C | Pd | 2.0 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 150 | °C |
| Maximum Lead Temperature for Soldering | TL | 260 | °C |
| Static Drain-to-Source On-Resistance (VGS = 4.5 Vdc, ID = 5.1 Adc) | RDS(on) | 36 mΩ | mΩ |
| Gate Threshold Voltage (ID = 0.25 mA, VDS = VGS) | VGS(th) | 0.6 to 1.2 | Vdc |
Key Features
- Ultra Low RDS(on)
- Higher Efficiency Extending Battery Life
- Logic Level Gate Drive
- Diode Exhibits High Speed, Soft Recovery
- Avalanche Energy Specified
- IDSS Specified at Elevated Temperature
- Pb-Free Package is Available
Applications
- Power Management in portable and battery-powered products (e.g., computers, printers, PCMCIA cards, cellular and cordless devices)
- Lithium Ion Battery Applications
- Notebook PC
Q & A
- What is the maximum drain-to-source voltage of the NTGS3446T1G?
The maximum drain-to-source voltage (VDSS) is 20 V. - What is the typical on-resistance of the NTGS3446T1G?
The typical static drain-to-source on-resistance (RDS(on)) is 36 mΩ at VGS = 4.5 Vdc and ID = 5.1 Adc. - What are the operating and storage temperature ranges for the NTGS3446T1G?
The operating and storage temperature range is -55°C to 150°C. - Is the NTGS3446T1G suitable for high-frequency applications?
Yes, it has high-speed switching characteristics and low input, output, and transfer capacitances, making it suitable for high-frequency applications. - What is the maximum continuous drain current of the NTGS3446T1G?
The maximum continuous drain current (ID) is 5.1 A at TA = 25°C. - Is the NTGS3446T1G Pb-free?
Yes, the NTGS3446T1G is available in a Pb-free package. - What is the thermal resistance junction-to-ambient for the NTGS3446T1G?
The thermal resistance junction-to-ambient (RJA) is 62.5 °C/W. - What are the typical turn-on and turn-off delay times for the NTGS3446T1G?
The typical turn-on delay time (td(on)) is 9.0 ns, and the typical turn-off delay time (td(off)) is 35 ns. - What is the gate threshold voltage range for the NTGS3446T1G?
The gate threshold voltage (VGS(th)) range is 0.6 to 1.2 Vdc. - Is the NTGS3446T1G still recommended for new designs?
No, the NTGS3446T1G is currently discontinued and not recommended for new designs.
