NTGS3441T1G
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onsemi NTGS3441T1G

Manufacturer No:
NTGS3441T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 1.65A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTGS3441T1G is a P-Channel Power MOSFET produced by onsemi. This device is designed for high-efficiency power management in various applications. It features an ultra-low on-resistance (RDS(on)) and is packaged in a miniature TSOP-6 surface mount package, making it ideal for space-constrained designs. The NTGS3441T1G is Pb-free and RoHS compliant, ensuring environmental sustainability. It is also AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

ParameterSymbolValueUnit
Drain-to-Source VoltageVDSS-20V
Gate-to-Source Voltage - ContinuousVGS-8.0V
Thermal Resistance Junction-to-AmbientRJA128°C/W
Total Power Dissipation @ TA = 25°CPd1.0W
Drain Current - Continuous @ TA = 25°CID-1.65A
Pulsed Drain Current (Tp ≤ 10 μs)IDM-10A
Gate Threshold VoltageVGS(th)-0.45 to -1.50V
Static Drain-to-Source On-State ResistanceRDS(on)0.069 to 0.135Ω
Operating and Storage Temperature RangeTJ, Tstg-55 to 150°C
Maximum Lead Temperature for Soldering PurposesTL260°C

Key Features

  • Ultra Low RDS(on) for higher efficiency and extended battery life.
  • Miniature TSOP-6 surface mount package for space-constrained designs.
  • Pb-free and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other demanding applications.
  • Low gate threshold voltage for easy switching.
  • High thermal resistance junction-to-ambient for reliable operation.

Applications

The NTGS3441T1G is suitable for power management in various portable and battery-powered products, including:

  • Cellular and cordless telephones.
  • PCMCIA cards.
  • Other battery-powered devices requiring high efficiency and compact design.

Q & A

  1. What is the drain-to-source voltage rating of the NTGS3441T1G? The drain-to-source voltage rating is -20 V.
  2. What is the gate-to-source voltage continuous rating? The gate-to-source voltage continuous rating is -8.0 V.
  3. What is the thermal resistance junction-to-ambient for the NTGS3441T1G? The thermal resistance junction-to-ambient is 128 °C/W.
  4. What is the total power dissipation at TA = 25°C? The total power dissipation at TA = 25°C is 1.0 W.
  5. What is the continuous drain current at TA = 25°C? The continuous drain current at TA = 25°C is -1.65 A.
  6. What is the pulsed drain current rating? The pulsed drain current rating is -10 A for Tp ≤ 10 μs.
  7. What is the gate threshold voltage range? The gate threshold voltage range is -0.45 to -1.50 V.
  8. What is the static drain-to-source on-state resistance range? The static drain-to-source on-state resistance range is 0.069 to 0.135 Ω.
  9. What is the operating and storage temperature range? The operating and storage temperature range is -55 to 150 °C.
  10. What is the maximum lead temperature for soldering purposes? The maximum lead temperature for soldering purposes is 260 °C.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.65A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:90mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 5 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Same Series
NTGS3441T1
NTGS3441T1
MOSFET P-CH 20V 1.65A 6TSOP

Similar Products

Part Number NTGS3441T1G NTGS3443T1G NTGS3446T1G NTGS3441BT1G NTGS3441PT1G NTGS3441T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel N-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 1.65A (Ta) 2.2A (Ta) 2.5A (Ta) 2.2A (Ta) 1.8A (Ta) 1.65A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 90mOhm @ 3.3A, 4.5V 65mOhm @ 4.4A, 4.5V 45mOhm @ 5.1A, 4.5V 90mOhm @ 3A, 4.5V 110mOhm @ 3A, 4.5V 90mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 1.2V @ 250µA 900mV @ 250µA 1.6V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V 15 nC @ 4.5 V 15 nC @ 4.5 V 9 nC @ 4.5 V 6 nC @ 4.5 V 14 nC @ 4.5 V
Vgs (Max) ±8V ±12V ±12V ±8V ±12V ±8V
Input Capacitance (Ciss) (Max) @ Vds 480 pF @ 5 V 565 pF @ 5 V 750 pF @ 10 V 630 pF @ 10 V 345 pF @ 15 V 480 pF @ 5 V
FET Feature - - - - - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta) 500mW (Ta) 700mW (Ta) 510mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 6-TSOP 6-TSOP 6-TSOP 6-TSOP 6-TSOP 6-TSOP
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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