NTGS3136PT1G
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onsemi NTGS3136PT1G

Manufacturer No:
NTGS3136PT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 3.7A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTGS3136PT1G is a single P-Channel power MOSFET produced by onsemi, designed for high-performance applications. This device is packaged in a TSOP-6 format, offering a compact solution for space-constrained designs. It features a low on-resistance (RDS(on)) and a 1.8 V gate rating, making it suitable for a wide range of applications, including battery and load management in portable equipment and high-side load switching.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS -20 V
Gate-to-Source Voltage VGS ±8.0 V
Continuous Drain Current (TA = 25°C) ID -5.1 A A
Continuous Drain Current (TA = 85°C) ID -3.6 A A
Power Dissipation (TA = 25°C) PD 1.25 W W
Pulsed Drain Current (tp = 10 µs) IDM -20 A A
Operating Junction and Storage Temperature TJ, TSTG -55 to 150 °C °C
Lead Temperature for Soldering Purposes TL 260 °C °C
On-Resistance (VGS = -4.5 V, ID = -5.1 A) RDS(on) 25-33 mΩ

Key Features

  • Low RDS(on) in TSOP-6 package
  • 1.8 V gate rating for low voltage operation
  • Fast switching characteristics
  • NV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
  • Pb-free, halogen-free/BFR-free, and RoHS compliant

Applications

  • Optimized for battery and load management applications in portable equipment
  • High-side load switch
  • Switching circuits for game consoles, camera phones, and other mobile devices

Q & A

  1. What is the maximum drain-to-source voltage for the NTGS3136PT1G?

    The maximum drain-to-source voltage (VDSS) is -20 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is -5.1 A at 25°C and -3.6 A at 85°C.

  3. What is the power dissipation at 25°C?

    The power dissipation (PD) is 1.25 W at 25°C.

  4. What is the pulsed drain current for a 10 μs pulse?

    The pulsed drain current (IDM) is -20 A for a 10 μs pulse.

  5. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is -55 to 150 °C.

  6. What is the lead temperature for soldering purposes?

    The lead temperature for soldering purposes is 260 °C.

  7. What is the typical on-resistance at VGS = -4.5 V and ID = -5.1 A?

    The typical on-resistance (RDS(on)) is 25-33 mΩ at VGS = -4.5 V and ID = -5.1 A.

  8. Is the NTGS3136PT1G suitable for automotive applications?

    Yes, the NV prefix indicates that it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.

  9. Is the NTGS3136PT1G RoHS compliant?

    Yes, the device is Pb-free, halogen-free/BFR-free, and RoHS compliant.

  10. What are some typical applications of the NTGS3136PT1G?

    Typical applications include battery and load management in portable equipment, high-side load switching, and switching circuits for game consoles and camera phones.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:33mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1901 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):700mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-TSOP
Package / Case:SOT-23-6 Thin, TSOT-23-6
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