Overview
The NTF6P02T3G is a P-Channel MOSFET manufactured by onsemi, designed for high-performance applications. This device is packaged in a SOT-223 format and is Pb-free and RoHS compliant. It is part of the NTF6P02 and NVF6P02 series, with the NVF prefix indicating AEC-Q101 qualification and PPAP capability, making it suitable for automotive and other demanding applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -20 | Vdc |
| Gate-to-Source Voltage | VGS | ±8.0 | Vdc |
| Continuous Drain Current @ TA = 25 °C | ID | -10 | A |
| Continuous Drain Current @ TA = 70 °C | ID | -8.4 | A |
| Single Pulse Drain Current | IDM | -35 | A |
| Total Power Dissipation @ TA = 25 °C | PD | 8.3 | W |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 150 | mJ |
| Junction to Ambient Thermal Resistance | RθJA | 71.4 | °C/W |
| Gate Threshold Voltage | VGS(th) | -0.4 to -1.2 | Vdc |
| Static Drain-to-Source On-Resistance | RDS(on) | 44 to 70 | mΩ |
Key Features
- Low RDS(on): The NTF6P02T3G features a low on-resistance, making it efficient for power management applications.
- Logic Level Gate Drive: This MOSFET can be driven by logic level signals, simplifying circuit design.
- High Speed, Soft Recovery Diode: The integrated diode exhibits high speed and soft recovery characteristics, reducing switching losses.
- Avalanche Energy Specified: The device is specified for single pulse avalanche energy, ensuring robustness under transient conditions.
- AEC-Q101 Qualified and PPAP Capable: The NVF prefix indicates that this device meets automotive standards and is PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-Free and RoHS Compliant: The device is lead-free and compliant with RoHS regulations, ensuring environmental sustainability.
Applications
- Power Management in Portables and Battery-Powered Products: Ideal for use in cellular and cordless telephones, PCMCIA cards, and other portable devices.
- Automotive Applications: With its AEC-Q101 qualification, it is suitable for various automotive power management needs.
- General Power Management: Can be used in a wide range of power management applications requiring high efficiency and reliability.
Q & A
- What is the maximum drain-to-source voltage of the NTF6P02T3G?
The maximum drain-to-source voltage (VDSS) is -20 Vdc.
- What is the continuous drain current at 25 °C?
The continuous drain current (ID) at 25 °C is -10 A.
- What is the total power dissipation at 25 °C?
The total power dissipation (PD) at 25 °C is 8.3 W.
- Is the NTF6P02T3G Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant.
- What are the typical applications of the NTF6P02T3G?
Typical applications include power management in portables and battery-powered products, automotive applications, and general power management.
- What is the gate threshold voltage range of the NTF6P02T3G?
The gate threshold voltage (VGS(th)) range is -0.4 to -1.2 Vdc.
- What is the static drain-to-source on-resistance of the NTF6P02T3G?
The static drain-to-source on-resistance (RDS(on)) is between 44 to 70 mΩ.
- Is the NTF6P02T3G AEC-Q101 qualified?
Yes, the NVF prefix indicates that it is AEC-Q101 qualified and PPAP capable.
- What is the operating and storage temperature range of the NTF6P02T3G?
The operating and storage temperature range is -55 to +150 °C.
- What is the single pulse drain-to-source avalanche energy of the NTF6P02T3G?
The single pulse drain-to-source avalanche energy (EAS) is 150 mJ.
