NVF6P02T3G
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onsemi NVF6P02T3G

Manufacturer No:
NVF6P02T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 10A SOT-223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NVF6P02T3G is a P-Channel power MOSFET produced by onsemi, designed for high-performance applications. This device is part of the NTF6P02 and NVF6P02 series, which are known for their low RDS(on) and logic level gate drive capabilities. The NVF6P02T3G is particularly suited for automotive and other applications requiring unique site and control change requirements, as it is AEC-Q101 qualified and PPAP capable.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS-20Vdc
Gate-to-Source VoltageVGS±8.0Vdc
Drain Current (Continuous @ TA = 25 °C)ID-10A
Drain Current (Continuous @ TA = 70 °C)ID-8.4A
Single Pulse Drain CurrentIDM-35A
Total Power Dissipation @ TA = 25 °CPD8.3W
Operating and Storage Temperature RangeTJ, Tstg-55 to +150°C
Single Pulse Drain-to-Source Avalanche EnergyEAS150mJ
Thermal Resistance - Junction to LeadRθJL15°C/W
Thermal Resistance - Junction to Ambient (Steady State)RθJA71.4°C/W
Maximum Lead Temperature for SolderingTL260°C
Static Drain-to-Source On-Resistance (Typ.)RDS(on)44

Key Features

  • Low RDS(on)
  • Logic Level Gate Drive
  • Diode Exhibits High Speed, Soft Recovery
  • Avalanche Energy Specified
  • AEC-Q101 Qualified and PPAP Capable for automotive and other applications requiring unique site and control change requirements
  • Pb-Free and RoHS Compliant

Applications

The NVF6P02T3G is commonly used in power management for portable and battery-powered products, such as cellular and cordless telephones, and PCMCIA cards.

Q & A

  1. What is the maximum drain-to-source voltage of the NVF6P02T3G?
    The maximum drain-to-source voltage is -20 Vdc.
  2. What is the continuous drain current at 25 °C?
    The continuous drain current at 25 °C is -10 A.
  3. What is the total power dissipation at 25 °C?
    The total power dissipation at 25 °C is 8.3 W.
  4. What is the operating and storage temperature range?
    The operating and storage temperature range is -55 to +150 °C.
  5. Is the NVF6P02T3G AEC-Q101 qualified?
    Yes, the NVF6P02T3G is AEC-Q101 qualified and PPAP capable.
  6. What is the typical static drain-to-source on-resistance?
    The typical static drain-to-source on-resistance is 44 mΩ.
  7. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 260 °C.
  8. Is the NVF6P02T3G Pb-Free and RoHS Compliant?
    Yes, the NVF6P02T3G is Pb-Free and RoHS Compliant.
  9. What are the typical applications of the NVF6P02T3G?
    The NVF6P02T3G is typically used in power management for portable and battery-powered products.
  10. What is the package type of the NVF6P02T3G?
    The package type is SOT-223.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:50mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1200 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):8.3W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NVF6P02T3G
NVF6P02T3G
MOSFET P-CH 20V 10A SOT-223

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