NTF3055L175T3
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onsemi NTF3055L175T3

Manufacturer No:
NTF3055L175T3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 2A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTF3055L175T3 is a Power MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This N-Channel MOSFET is housed in a SOT-223 (TO-261) package and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. It is a logic level device, making it compatible with a wide range of control signals.

Key Specifications

Rating Symbol Value Unit
Drain-to-Source Voltage VDSS 60 Vdc
Drain-to-Gate Voltage (RGS = 1.0 MΩ) VDGR 60 Vdc
Gate-to-Source Voltage VGS ±15 (Continuous), ±20 (Non-repetitive, tp ≤ 10 ms) Vdc
Drain Current ID 2.0 A (Continuous @ TA = 25°C), 1.5 A (Continuous @ TA = 100°C), 6.0 A (Single Pulse, tp ≤ 10 μs) A
Gate Threshold Voltage VGS(th) 1.0 - 2.0 Vdc Vdc
Static Drain-to-Source On-Resistance RDS(on) 155 - 175 mΩ (VGS = 5.0 Vdc, ID = 1.0 A)
Input Capacitance Ciss 194 - 270 pF (VDS = 25 Vdc, VGS = 0 V, f = 1.0 MHz) pF
Turn-On Delay Time td(on) 10.2 - 20 ns (VDD = 30 Vdc, ID = 2.0 A, VGS = 5.0 Vdc, RG = 9.1 Ω) ns

Key Features

  • Pb-Free Packages are Available
  • Logic Level Gate Drive
  • Low On-Resistance: 155 - 175 mΩ (VGS = 5.0 Vdc, ID = 1.0 A)
  • High Speed Switching Capability
  • Low Gate Charge: 5.1 - 10 nC (VDS = 48 Vdc, ID = 2.0 A, VGS = 5.0 Vdc)

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTF3055L175T3?

    The maximum drain-to-source voltage (VDSS) is 60 Vdc.

  2. What is the typical on-resistance of the NTF3055L175T3?

    The typical static drain-to-source on-resistance (RDS(on)) is 155 - 175 mΩ at VGS = 5.0 Vdc and ID = 1.0 A.

  3. What are the gate-to-source voltage limits for the NTF3055L175T3?

    The continuous gate-to-source voltage (VGS) is ±15 Vdc, and the non-repetitive gate-to-source voltage is ±20 Vdc for tp ≤ 10 ms.

  4. What is the maximum drain current for the NTF3055L175T3?

    The maximum continuous drain current (ID) is 2.0 A at TA = 25°C and 1.5 A at TA = 100°C.

  5. What are the typical switching times for the NTF3055L175T3?

    The turn-on delay time (td(on)) is 10.2 - 20 ns, and the turn-off delay time (td(off)) is 14.3 - 30 ns.

  6. Is the NTF3055L175T3 Pb-Free?
  7. What is the input capacitance of the NTF3055L175T3?

    The input capacitance (Ciss) is 194 - 270 pF at VDS = 25 Vdc, VGS = 0 V, and f = 1.0 MHz.

  8. What are the typical applications for the NTF3055L175T3?

    The NTF3055L175T3 is typically used in power supplies, converters, power motor controls, and bridge circuits.

  9. What is the package type for the NTF3055L175T3?

    The NTF3055L175T3 is housed in a SOT-223 (TO-261) package.

  10. What is the gate charge for the NTF3055L175T3?

    The total gate charge (QT) is 5.1 - 10 nC at VDS = 48 Vdc, ID = 2.0 A, and VGS = 5.0 Vdc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:175mOhm @ 1A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NTF3055L175T3
NTF3055L175T3
MOSFET N-CH 60V 2A SOT223
NTF3055L175T3G
NTF3055L175T3G
MOSFET N-CH 60V 2A SOT223

Similar Products

Part Number NTF3055L175T3 NTF3055L175T3G NTF3055L175T1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V
Rds On (Max) @ Id, Vgs 175mOhm @ 1A, 5V 175mOhm @ 1A, 5V 175mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 5 V 10 nC @ 5 V 10 nC @ 5 V
Vgs (Max) ±15V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V 270 pF @ 25 V 270 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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