Overview
The NTF3055L175T1 is a power MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This N-Channel MOSFET is packaged in a SOT-223 (TO-261) case and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. It is a Pb-Free device, making it environmentally friendly. The MOSFET is characterized by its high current handling capability and low on-resistance, making it an ideal choice for applications requiring efficient and reliable switching performance.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain-to-Gate Voltage (RGS = 1.0 MΩ) | VDGR | 60 | Vdc |
| Gate-to-Source Voltage | VGS | ±15 (Continuous), ±20 (Non-repetitive, tp ≤ 10 ms) | Vdc |
| Drain Current | ID | 2.0 A (Continuous @ TA = 25°C), 1.2 A (Continuous @ TA = 100°C), 6.0 A (Single Pulse, tp ≤ 10 μs) | Adc, Apk |
| Total Power Dissipation @ TA = 25°C | PD | 2.1 W | W |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to 175°C | °C |
| Static Drain-to-Source On-Resistance | RDS(on) | 155 - 175 mΩ (VGS = 5.0 Vdc, ID = 1.0 A) | mΩ |
| Gate Threshold Voltage | VGS(th) | 1.0 - 4.2 Vdc | Vdc |
| Input Capacitance | Ciss | 194 - 270 pF (VDS = 25 Vdc, VGS = 0 V, f = 1.0 MHz) | pF |
| Turn-On Delay Time | td(on) | 10.2 - 20 ns (VDD = 30 Vdc, ID = 2.0 A, VGS = 5.0 Vdc, RG = 9.1 Ω) | ns |
Key Features
- Pb-Free package available, making it environmentally friendly.
- High current handling capability up to 2.0 A.
- Low on-resistance (RDS(on)) of 155 - 175 mΩ at VGS = 5.0 Vdc and ID = 1.0 A.
- High speed switching characteristics with turn-on delay time of 10.2 - 20 ns.
- Suitable for high frequency applications due to low input capacitance.
- Designed for low voltage applications with a maximum drain-to-source voltage of 60 Vdc.
Applications
- Power Supplies: Ideal for use in DC-DC converters and other power supply circuits.
- Converters: Suitable for use in various types of converters, including buck, boost, and buck-boost converters.
- Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
- Bridge Circuits: Can be used in half-bridge and full-bridge configurations for high power applications.
Q & A
- What is the maximum drain-to-source voltage of the NTF3055L175T1 MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 2.0 A.
- What is the typical on-resistance of the MOSFET?
The typical on-resistance (RDS(on)) is 155 - 175 mΩ at VGS = 5.0 Vdc and ID = 1.0 A.
- What are the typical turn-on and turn-off delay times?
The typical turn-on delay time (td(on)) is 10.2 - 20 ns, and the typical turn-off delay time (td(off)) is 14.3 - 30 ns.
- What is the operating temperature range of the MOSFET?
The operating and storage temperature range is −55 to 175°C.
- Is the NTF3055L175T1 Pb-Free?
Yes, the NTF3055L175T1 is available in Pb-Free packages.
- What are the common applications of the NTF3055L175T1?
Common applications include power supplies, converters, power motor controls, and bridge circuits.
- What is the maximum gate-to-source voltage?
The maximum continuous gate-to-source voltage (VGS) is ±15 Vdc, and the non-repetitive voltage is ±20 Vdc for tp ≤ 10 ms.
- What is the input capacitance of the MOSFET?
The input capacitance (Ciss) is 194 - 270 pF at VDS = 25 Vdc, VGS = 0 V, and f = 1.0 MHz.
- What is the forward on-voltage of the source-drain diode?
The forward on-voltage (VSD) of the source-drain diode is 0.84 - 1.0 Vdc at IS = 2.0 A and VGS = 0 Vdc.
