NTF3055L175T1G
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onsemi NTF3055L175T1G

Manufacturer No:
NTF3055L175T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 2A SOT223
Delivery:
Payment:
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Product Introduction

Overview

The NTF3055L175T1G is a high-performance N-Channel MOSFET produced by onsemi. This device is designed for low voltage, high speed switching applications, making it ideal for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET features a logic level gate drive, which simplifies the control circuitry and enhances overall system efficiency.

Key Specifications

ParameterValue
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C2 A
Package TypeSOT-223 (TO-261)
Drive VoltageLogic Level
Operating Temperature Range-55°C to 150°C

Key Features

  • Logic Level Gate Drive: Simplifies control circuitry and enhances system efficiency.
  • High Speed Switching: Suitable for high-frequency applications.
  • Low On-Resistance (Rds(on)): Minimizes power losses and improves thermal performance.
  • Compact SOT-223 Package: Offers a balance between power handling and board space.
  • Pb-Free: Compliant with environmental regulations.

Applications

  • Power Supplies: DC-DC converters, switching power supplies.
  • Converters: Buck, boost, and flyback converters.
  • Power Motor Controls: Motor drives, servo motors.
  • Bridge Circuits: Full-bridge, half-bridge configurations.

Q & A

  1. What is the maximum drain to source voltage of the NTF3055L175T1G?
    The maximum drain to source voltage is 60 V.
  2. What is the continuous drain current rating at 25°C?
    The continuous drain current rating at 25°C is 2 A.
  3. What type of package does the NTF3055L175T1G come in?
    The NTF3055L175T1G comes in a SOT-223 (TO-261) package.
  4. Is the NTF3055L175T1G Pb-Free?
    Yes, the NTF3055L175T1G is Pb-Free.
  5. What is the operating temperature range of the NTF3055L175T1G?
    The operating temperature range is -55°C to 150°C.
  6. What type of gate drive does the NTF3055L175T1G use?
    The NTF3055L175T1G uses a logic level gate drive.
  7. What are some common applications for the NTF3055L175T1G?
    Common applications include power supplies, converters, power motor controls, and bridge circuits.
  8. Why is the logic level gate drive beneficial?
    The logic level gate drive simplifies the control circuitry and enhances system efficiency.
  9. What is the significance of low on-resistance (Rds(on)) in the NTF3055L175T1G?
    Low on-resistance minimizes power losses and improves thermal performance.
  10. Is the NTF3055L175T1G suitable for high-frequency applications?
    Yes, the NTF3055L175T1G is suitable for high-frequency applications due to its high speed switching capability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:175mOhm @ 1A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NTF3055L175T1G
NTF3055L175T1G
MOSFET N-CH 60V 2A SOT223

Similar Products

Part Number NTF3055L175T1G NTF3055L175T3G NTF3055L175T1
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V
Rds On (Max) @ Id, Vgs 175mOhm @ 1A, 5V 175mOhm @ 1A, 5V 175mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 5 V 10 nC @ 5 V 10 nC @ 5 V
Vgs (Max) ±15V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V 270 pF @ 25 V 270 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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