NTF3055L175T3G
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onsemi NTF3055L175T3G

Manufacturer No:
NTF3055L175T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 2A SOT223
Delivery:
Payment:
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Product Introduction

Overview

The NTF3055L175T3G is a logic-level N-Channel Power MOSFET produced by ON Semiconductor. This device is designed for high-performance applications requiring low on-resistance and fast switching times. It is packaged in the SOT-223 package, making it suitable for a variety of power management and switching applications.

Key Specifications

Parameter Value
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 2 A
Package Type SOT-223

Key Features

  • Logic-Level Gate Drive for Easy Interface with Microcontrollers and Other Logic Circuits
  • Low On-Resistance (Rds(on)) for Reduced Power Loss
  • High Drain Current Capability of 2 A
  • High Drain-Source Breakdown Voltage of 60 V
  • Fast Switching Times for High-Frequency Applications
  • SOT-223 Package for Compact and Efficient Design

Applications

  • Power Management and Switching in Various Electronic Systems
  • DC-DC Converters and Power Supplies
  • Motor Control and Drive Circuits
  • Audio Amplifiers and High-Frequency Switching Applications
  • General Purpose Power Switching in Industrial and Consumer Electronics

Q & A

  1. What is the drain-source breakdown voltage of the NTF3055L175T3G?

    The drain-source breakdown voltage (Vds) is 60 V.

  2. What is the continuous drain current rating of the NTF3055L175T3G?

    The continuous drain current (Id) is 2 A.

  3. What type of package does the NTF3055L175T3G come in?

    The device is packaged in a SOT-223 package.

  4. Is the NTF3055L175T3G suitable for high-frequency applications?

    Yes, it is suitable due to its fast switching times.

  5. What is the transistor polarity of the NTF3055L175T3G?

    The transistor polarity is N-Channel.

  6. Can the NTF3055L175T3G be easily interfaced with microcontrollers?

    Yes, it has a logic-level gate drive for easy interface with microcontrollers and other logic circuits.

  7. What are some common applications of the NTF3055L175T3G?

    Common applications include power management, DC-DC converters, motor control, audio amplifiers, and general purpose power switching.

  8. Is the NTF3055L175T3G still in production?

    No, the NTF3055L175T3G has been discontinued by ON Semiconductor.

  9. What are some possible replacement parts for the NTF3055L175T3G?

    Users should refer to the product discontinuance notice from ON Semiconductor for recommended replacement parts.

  10. Where can I find detailed specifications for the NTF3055L175T3G?

    Detailed specifications can be found in the datasheet available on websites such as Mouser, Digi-Key, and the official ON Semiconductor website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:175mOhm @ 1A, 5V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:270 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.3W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223 (TO-261)
Package / Case:TO-261-4, TO-261AA
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Same Series
NTF3055L175T3
NTF3055L175T3
MOSFET N-CH 60V 2A SOT223
NTF3055L175T3G
NTF3055L175T3G
MOSFET N-CH 60V 2A SOT223

Similar Products

Part Number NTF3055L175T3G NTF3055L175T1G NTF3055L175T3
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta) 2A (Ta) 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V 5V 5V
Rds On (Max) @ Id, Vgs 175mOhm @ 1A, 5V 175mOhm @ 1A, 5V 175mOhm @ 1A, 5V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 5 V 10 nC @ 5 V 10 nC @ 5 V
Vgs (Max) ±15V ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 270 pF @ 25 V 270 pF @ 25 V 270 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 (TO-261) SOT-223 (TO-261) SOT-223 (TO-261)
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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