Overview
The NTE4153NT1G is a single N-Channel MOSFET with ESD protection, manufactured by onsemi. This small signal MOSFET is available in the SC-89 package and is designed for various applications requiring low RDS(on) and high efficiency. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
Key Specifications
Parameter | Symbol | Value | Units |
---|---|---|---|
Drain-to-Source Voltage | VDSS | 20 | V |
Gate-to-Source Voltage | VGS | ±6.0 | V |
Continuous Drain Current (TA = 25°C) | ID | 915 | mA |
Continuous Drain Current (TA = 85°C) | ID | 660 | mA |
Power Dissipation (Steady State) | PD | 300 | mW |
Pulsed Drain Current (tp = 10 μs) | IDM | 1.3 | A |
Operating Junction and Storage Temperature | TJ, TSTG | −55 to 150 | °C |
Continuous Source Current (Body Diode) | IS | 280 | mA |
Lead Temperature for Soldering Purposes | TL | 260 | °C |
Junction-to-Ambient Thermal Resistance (SC-89) | RJA | 400 | °C/W |
Gate Threshold Voltage | VGS(TH) | 0.45 to 1.1 | V |
Drain-to-Source On Resistance (VGS = 4.5 V, ID = 600 mA) | RDS(on) | 127 to 230 | mΩ |
Key Features
- Low RDS(on) improving system efficiency
- Low threshold voltage, 1.5 V rated
- ESD protected gate
- NV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
- Pb-free packages available
Applications
- Load/Power switches
- Power supply converter circuits
- Battery management
- Portables like cell phones, PDAs, digital cameras, pagers, etc.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTE4153NT1G?
The maximum drain-to-source voltage (VDSS) is 20 V.
- What is the continuous drain current at 25°C and 85°C?
The continuous drain current is 915 mA at 25°C and 660 mA at 85°C.
- What is the power dissipation rating for the NTE4153NT1G?
The power dissipation rating is 300 mW.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is from −55°C to 150°C.
- Is the NTE4153NT1G AEC-Q101 qualified?
- What are the typical applications of the NTE4153NT1G?
The NTE4153NT1G is typically used in load/power switches, power supply converter circuits, battery management, and portable devices like cell phones and digital cameras.
- What is the gate threshold voltage range of the NTE4153NT1G?
The gate threshold voltage range is from 0.45 V to 1.1 V.
- What is the typical drain-to-source on resistance (RDS(on)) at VGS = 4.5 V and ID = 600 mA?
The typical drain-to-source on resistance (RDS(on)) is between 127 mΩ and 230 mΩ.
- Is the NTE4153NT1G available in Pb-free packages?
- What is the junction-to-ambient thermal resistance for the SC-89 package?
The junction-to-ambient thermal resistance for the SC-89 package is 400 °C/W.