NTE4153NT1G
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onsemi NTE4153NT1G

Manufacturer No:
NTE4153NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 915MA SC89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NTE4153NT1G is a single N-Channel MOSFET with ESD protection, manufactured by onsemi. This small signal MOSFET is available in the SC-89 package and is designed for various applications requiring low RDS(on) and high efficiency. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Key Specifications

Parameter Symbol Value Units
Drain-to-Source Voltage VDSS 20 V
Gate-to-Source Voltage VGS ±6.0 V
Continuous Drain Current (TA = 25°C) ID 915 mA
Continuous Drain Current (TA = 85°C) ID 660 mA
Power Dissipation (Steady State) PD 300 mW
Pulsed Drain Current (tp = 10 μs) IDM 1.3 A
Operating Junction and Storage Temperature TJ, TSTG −55 to 150 °C
Continuous Source Current (Body Diode) IS 280 mA
Lead Temperature for Soldering Purposes TL 260 °C
Junction-to-Ambient Thermal Resistance (SC-89) RJA 400 °C/W
Gate Threshold Voltage VGS(TH) 0.45 to 1.1 V
Drain-to-Source On Resistance (VGS = 4.5 V, ID = 600 mA) RDS(on) 127 to 230

Key Features

  • Low RDS(on) improving system efficiency
  • Low threshold voltage, 1.5 V rated
  • ESD protected gate
  • NV prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable
  • Pb-free packages available

Applications

  • Load/Power switches
  • Power supply converter circuits
  • Battery management
  • Portables like cell phones, PDAs, digital cameras, pagers, etc.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the NTE4153NT1G?

    The maximum drain-to-source voltage (VDSS) is 20 V.

  2. What is the continuous drain current at 25°C and 85°C?

    The continuous drain current is 915 mA at 25°C and 660 mA at 85°C.

  3. What is the power dissipation rating for the NTE4153NT1G?

    The power dissipation rating is 300 mW.

  4. What is the operating junction and storage temperature range?

    The operating junction and storage temperature range is from −55°C to 150°C.

  5. Is the NTE4153NT1G AEC-Q101 qualified?
  6. What are the typical applications of the NTE4153NT1G?

    The NTE4153NT1G is typically used in load/power switches, power supply converter circuits, battery management, and portable devices like cell phones and digital cameras.

  7. What is the gate threshold voltage range of the NTE4153NT1G?

    The gate threshold voltage range is from 0.45 V to 1.1 V.

  8. What is the typical drain-to-source on resistance (RDS(on)) at VGS = 4.5 V and ID = 600 mA?

    The typical drain-to-source on resistance (RDS(on)) is between 127 mΩ and 230 mΩ.

  9. Is the NTE4153NT1G available in Pb-free packages?
  10. What is the junction-to-ambient thermal resistance for the SC-89 package?

    The junction-to-ambient thermal resistance for the SC-89 package is 400 °C/W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:915mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:230mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.82 nC @ 4.5 V
Vgs (Max):±6V
Input Capacitance (Ciss) (Max) @ Vds:110 pF @ 16 V
FET Feature:- 
Power Dissipation (Max):300mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
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