Overview
The NTD70N03RT4 is a high-performance N-Channel Power MOSFET produced by onsemi. This device is part of the NTD70N03R series and is packaged in a DPAK-3 configuration. It is designed for fast switching performance and low conduction losses, making it suitable for a variety of power management and switching applications.
The NTD70N03RT4 features onsemi's advanced Planar HD3e process, which enhances its switching speed and reduces power losses. The device is also available in Pb-Free packages, aligning with environmental regulations and sustainability goals.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 25 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | Vdc |
| Thermal Resistance - Junction-to-Case | RθJC | 2.4 | °C/W |
| Total Power Dissipation @ TC = 25°C | PD | 62.5 | W |
| Drain Current - Continuous @ TC = 25°C | ID | 72.0 | A |
| Gate Threshold Voltage | VGS(th) | 1.0 - 1.5 | Vdc |
| Static Drain-to-Source On-Resistance | RDS(on) | 5.6 mΩ (Typical at VGS = 10 Vdc, ID = 20 Adc) | mΩ |
| Input Capacitance | CISS | 1333 pF | pF |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 175 °C | °C |
Key Features
- Planar HD3e Process: Enhances fast switching performance and reduces power losses.
- Low RDS(on): Minimizes conduction losses, ensuring efficient operation.
- Low CISS: Reduces driver losses, improving overall system efficiency.
- Low Gate Charge: Facilitates faster switching times and lower power consumption.
- Pb-Free Packages: Available in lead-free configurations, complying with environmental regulations.
- High Drain Current: Supports up to 72 A continuous drain current at TC = 25°C.
- Wide Operating Temperature Range: Operates from -55°C to 175°C, making it suitable for diverse applications.
Applications
- Power Management: Ideal for power supplies, DC-DC converters, and voltage regulators.
- Motor Control: Suitable for motor drive applications due to its high current handling and fast switching capabilities.
- Switching Applications: Used in switching circuits, such as inverter circuits and power amplifiers.
- Automotive Systems: Can be used in automotive systems requiring high reliability and performance.
- Industrial Power Systems: Applicable in industrial power systems, including power factor correction and high-frequency switching.
Q & A
- What is the maximum drain-to-source voltage of the NTD70N03RT4?
The maximum drain-to-source voltage (VDSS) is 25 Vdc.
- What is the typical on-resistance of the NTD70N03RT4?
The typical static drain-to-source on-resistance (RDS(on)) is 5.6 mΩ at VGS = 10 Vdc and ID = 20 Adc.
- What is the maximum continuous drain current of the NTD70N03RT4 at TC = 25°C?
The maximum continuous drain current (ID) is 72.0 A at TC = 25°C.
- What is the operating temperature range of the NTD70N03RT4?
The operating and storage temperature range is from -55°C to 175°C.
- Is the NTD70N03RT4 available in Pb-Free packages?
- What is the typical input capacitance of the NTD70N03RT4?
The typical input capacitance (CISS) is 1333 pF.
- What is the gate threshold voltage range of the NTD70N03RT4?
The gate threshold voltage (VGS(th)) range is from 1.0 to 1.5 Vdc.
- What are the typical turn-on and turn-off delay times of the NTD70N03RT4?
The typical turn-on delay time (td(on)) is 6.9 ns, and the typical turn-off delay time (td(off)) is 18.4 ns.
- What is the maximum single pulse drain-to-source avalanche energy of the NTD70N03RT4?
The maximum single pulse drain-to-source avalanche energy (EAS) is 71.7 mJ.
- What is the maximum lead temperature for soldering purposes of the NTD70N03RT4?
The maximum lead temperature for soldering purposes is 260°C for 10 seconds.
