Overview
The NTD70N03RT4G is a high-performance N-Channel Power MOSFET produced by onsemi. This device is part of the HD3e (High-Performance, High-Density) family, known for its fast switching performance and low on-resistance. The NTD70N03RT4G is packaged in a DPAK-3 configuration, which is lead-free, making it suitable for a wide range of applications where high power density and efficiency are required.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 25 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | Vdc |
| Drain Current - Continuous @ TC = 25°C | ID | 72 | A |
| Drain Current - Continuous @ TA = 25°C, Limited by Package | ID | 62.8 | A |
| Single Pulse Drain Current | IDM | 140 | A |
| Gate Threshold Voltage | VGS(th) | 1.0 - 1.5 | Vdc |
| Static Drain-to-Source On-Resistance | RDS(on) | 5.6 mΩ (Typical at VGS = 10 Vdc, ID = 20 A) | mΩ |
| Input Capacitance | CISS | 1333 pF | pF |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to 175 | °C |
Key Features
- Planar HD3e Process: Ensures fast switching performance and high efficiency.
- Low RDS(on): Minimizes conduction loss, enhancing overall system efficiency.
- Low CISS: Reduces driver loss, making it suitable for high-frequency applications.
- Low Gate Charge: Facilitates faster switching times and lower switching losses.
- Pb-Free Packages: Compliant with environmental regulations, making it a sustainable choice.
Applications
- Power Supplies: Suitable for high-efficiency power supply designs, including DC-DC converters and switch-mode power supplies.
- Motor Control: Used in motor drive applications due to its high current handling and fast switching capabilities.
- Automotive Systems: Applicable in various automotive systems requiring high power density and reliability.
- Industrial Automation: Ideal for use in industrial automation and control systems where high performance and efficiency are crucial.
Q & A
- What is the maximum drain-to-source voltage of the NTD70N03RT4G?
The maximum drain-to-source voltage (VDSS) is 25 Vdc.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 72 A.
- What is the typical on-resistance of the NTD70N03RT4G?
The typical static drain-to-source on-resistance (RDS(on)) is 5.6 mΩ at VGS = 10 Vdc and ID = 20 A.
- What is the operating temperature range of this MOSFET?
The operating and storage temperature range is -55°C to 175°C.
- Is the NTD70N03RT4G lead-free?
- What is the gate threshold voltage of the NTD70N03RT4G?
The gate threshold voltage (VGS(th)) is between 1.0 V and 1.5 V.
- What are the typical switching times for this MOSFET?
The turn-on delay time (td(on)) is approximately 6.9 ns, and the turn-off delay time (td(off)) is about 18.4 ns.
- What is the input capacitance of the NTD70N03RT4G?
The input capacitance (CISS) is 1333 pF.
- Can the NTD70N03RT4G be used in automotive applications?
- What is the maximum single pulse drain current rating?
The maximum single pulse drain current (IDM) is 140 A.
