Overview
The NTD4858NT4G is a high-performance, single N-Channel power MOSFET produced by onsemi. This device is designed using trench technology, which enhances its electrical characteristics and minimizes losses. It is available in DPAK and IPAK packages, both of which are lead-free, making it suitable for a wide range of applications where high current handling and low on-resistance are required.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 25 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TJ = 25°C) | ID | 14 | A |
| Continuous Drain Current (TJ = 85°C) | ID | 10.9 | A |
| Power Dissipation (TJ = 25°C) | PD | 2.0 | W |
| Pulsed Drain Current (tp = 10 μs) | IDM | 146 | A |
| Operating Junction and Storage Temperature | TJ, TSTG | −55 to +175 | °C |
| Source Current (Body Diode) | IS | 45 | A |
| Drain to Source dV/dt | dV/dt | 6 | V/ns |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 112.5 | mJ |
| Lead Temperature for Soldering Purposes | TL | 260 | °C |
| On-Resistance (RDS(on)) at VGS = 10 V | RDS(on) | 6.2 mΩ | mΩ |
| Junction-to-Case Thermal Resistance | RJC | 2.75 °C/W | °C/W |
Key Features
- Trench Technology: Enhances electrical characteristics and reduces losses.
- Low RDS(on): Minimizes conduction losses.
- Low Capacitance: Minimizes driver losses.
- Optimized Gate Charge: Minimizes switching losses.
- Pb-Free Devices: Compliant with lead-free requirements.
Applications
- VCORE Applications: Suitable for core voltage regulation in high-performance systems.
- DC-DC Converters: Ideal for high-efficiency power conversion.
- High/Low Side Switching: Can be used in both high and low side switching configurations.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTD4858NT4G?
The maximum drain-to-source voltage (VDSS) is 25 V.
- What is the continuous drain current at TJ = 25°C?
The continuous drain current at TJ = 25°C is 14 A.
- What is the on-resistance (RDS(on)) at VGS = 10 V?
The on-resistance (RDS(on)) at VGS = 10 V is 6.2 mΩ.
- What are the typical applications of the NTD4858NT4G?
Typical applications include VCORE applications, DC-DC converters, and high/low side switching.
- Is the NTD4858NT4G a lead-free device?
- What is the junction-to-case thermal resistance (RJC) of the NTD4858NT4G?
The junction-to-case thermal resistance (RJC) is 2.75 °C/W.
- What is the maximum operating junction temperature?
The maximum operating junction temperature is 175°C.
- What is the single pulse drain-to-source avalanche energy (EAS)?
The single pulse drain-to-source avalanche energy (EAS) is 112.5 mJ.
- What is the lead temperature for soldering purposes?
The lead temperature for soldering purposes is 260°C.
- What are the package options for the NTD4858NT4G?
The device is available in DPAK and IPAK packages.
