NTD4302T4G
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onsemi NTD4302T4G

Manufacturer No:
NTD4302T4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 8.4A/68A DPAK
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The NTD4302T4G is a low to medium voltage N-Channel power MOSFET produced by onsemi. This device is housed in a DPAK (TO-252) package and is designed for high-performance applications requiring low on-resistance and high current handling. The NTD4302T4G is suitable for a wide range of power management and switching applications due to its robust specifications and reliability.

Key Specifications

ParameterValue
Channel ModeEnhancement
Voltage Rating (Vds)30 V
Continuous Drain Current (Id)8.4 A (Ta), 68 A (Tc)
Power Dissipation (Pd)1.04 W (Ta), 75 W (Tc)
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Package TypeDPAK (TO-252)

Key Features

  • Low on-resistance (Rds(on)) for efficient power handling
  • High current capability with 68 A continuous drain current at Tc
  • Wide operating temperature range from -55°C to +150°C
  • Enhancement mode N-Channel MOSFET for reliable switching performance
  • Pb-free and RoHS compliant DPAK package

Applications

The NTD4302T4G is versatile and can be used in various applications, including:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Switching regulators and inverters
  • Automotive and industrial power management systems
  • General-purpose switching and power amplification

Q & A

  1. What is the voltage rating of the NTD4302T4G MOSFET?
    The voltage rating (Vds) of the NTD4302T4G is 30 V.
  2. What is the maximum continuous drain current of the NTD4302T4G?
    The maximum continuous drain current (Id) is 8.4 A at ambient temperature (Ta) and 68 A at case temperature (Tc).
  3. What is the power dissipation capability of the NTD4302T4G?
    The power dissipation (Pd) is 1.04 W at ambient temperature (Ta) and 75 W at case temperature (Tc).
  4. What is the operating temperature range of the NTD4302T4G?
    The operating temperature range is from -55°C to +150°C.
  5. What type of package does the NTD4302T4G use?
    The NTD4302T4G is housed in a DPAK (TO-252) package.
  6. Is the NTD4302T4G Pb-free and RoHS compliant?
    Yes, the NTD4302T4G is Pb-free and RoHS compliant.
  7. What are some common applications for the NTD4302T4G?
    Common applications include power supplies, motor control systems, switching regulators, automotive and industrial power management, and general-purpose switching.
  8. Is the NTD4302T4G still in production?
    No, the NTD4302T4G is no longer manufactured.
  9. Where can I find detailed specifications for the NTD4302T4G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser and Digi-Key.
  10. What is the channel mode of the NTD4302T4G?
    The channel mode of the NTD4302T4G is enhancement.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):1.04W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
NTD4302-1G
NTD4302-1G
MOSFET N-CH 30V 8.4A/68A IPAK
NTD4302G
NTD4302G
MOSFET N-CH 30V 8.4A/68A DPAK

Similar Products

Part Number NTD4302T4G NTD4302T4
Manufacturer onsemi onsemi
Product Status Last Time Buy Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Ta), 68A (Tc) 8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V 10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 24 V 2400 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 1.04W (Ta), 75W (Tc) 1.04W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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