NTD4302T4
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onsemi NTD4302T4

Manufacturer No:
NTD4302T4
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 8.4A/68A DPAK
Delivery:
Payment:
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Product Introduction

Overview

The NTD4302T4 is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It is available in both DPAK and IPAK packages, making it versatile for various mounting needs. The NTD4302T4 is RoHS compliant and lead-free, ensuring environmental sustainability.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS30Vdc
Gate-to-Source Voltage - ContinuousVGS±20Vdc
Continuous Drain Current @ TC = 25°CID68A
Thermal Resistance - Junction-to-CaseRthjc-°C/W
Total Power Dissipation @ TC = 25°CPd-W
Maximum Lead Temperature for SolderingTL260°C
On-Resistance (RDS(on)) @ VGS = 10 VRDS(on)7.8 mΩ
Gate Threshold VoltageVGS(th)1.0 - 3.0V

Key Features

  • Ultra Low RDS(on) for higher efficiency and extended battery life.
  • Logic Level Gate Drive for easy integration with logic circuits.
  • High Speed, Soft Recovery Diode for reduced switching losses.
  • Avalanche Energy Specified for robust operation under transient conditions.
  • IDSS Specified at Elevated Temperature for reliable performance across temperature ranges.
  • Pb-Free and RoHS Compliant for environmental sustainability.

Applications

  • DC-DC Converters: Ideal for high-efficiency power conversion.
  • Low Voltage Motor Control: Suitable for motor drive applications requiring high current and low on-resistance.
  • Power Management in Portable and Battery Powered Products: Used in devices such as computers, printers, cellular and cordless telephones, and PCMCIA cards.

Q & A

  1. What is the maximum drain-to-source voltage of the NTD4302T4?
    The maximum drain-to-source voltage (VDSS) is 30 Vdc.
  2. What is the continuous gate-to-source voltage rating?
    The continuous gate-to-source voltage (VGS) rating is ±20 Vdc.
  3. What is the typical on-resistance (RDS(on)) of the NTD4302T4?
    The typical on-resistance (RDS(on)) is 7.8 mΩ at VGS = 10 V.
  4. What are the package options for the NTD4302T4?
    The device is available in both DPAK and IPAK packages.
  5. Is the NTD4302T4 RoHS compliant?
    Yes, the NTD4302T4 is RoHS compliant and lead-free.
  6. What are some typical applications of the NTD4302T4?
    Typical applications include DC-DC converters, low voltage motor control, and power management in portable and battery-powered products.
  7. What is the maximum continuous drain current at TC = 25°C?
    The maximum continuous drain current at TC = 25°C is 68 A.
  8. What is the gate threshold voltage range?
    The gate threshold voltage (VGS(th)) range is 1.0 to 3.0 V.
  9. What is the maximum lead temperature for soldering?
    The maximum lead temperature for soldering is 260°C.
  10. Does the NTD4302T4 have a high speed, soft recovery diode?
    Yes, the NTD4302T4 features a high speed, soft recovery diode.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2400 pF @ 24 V
FET Feature:- 
Power Dissipation (Max):1.04W (Ta), 75W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
NTD4302
NTD4302
MOSFET N-CH 30V 8.4A/68A DPAK

Similar Products

Part Number NTD4302T4 NTD4302T4G
Manufacturer onsemi onsemi
Product Status Obsolete Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.4A (Ta), 68A (Tc) 8.4A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 20A, 10V 10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 24 V 2400 pF @ 24 V
FET Feature - -
Power Dissipation (Max) 1.04W (Ta), 75W (Tc) 1.04W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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