Overview
The NDS9407 is a P-Channel PowerTrench® MOSFET produced by onsemi. This device is part of onsemi’s advanced PowerTrench process, optimized for power management applications that require a wide range of gate drive voltage ratings (4.5V – 20V). It is known for its rugged gate design, low on-resistance, and high performance trench technology, making it suitable for various power management tasks.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | -60 | V |
| Gate-Source Voltage (VGSS) | ±20 | V |
| Drain Current - Continuous (ID) | -3.0 | A |
| Drain Current - Pulsed (ID) | -12 | A |
| Power Dissipation (PD) | 2.5 (Note 1a), 1.2 (Note 1b), 1.0 (Note 1c) | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +175 | °C |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 50 (Note 1a), 125 (Note 1c) | °C/W |
| Thermal Resistance, Junction-to-Case (RθJC) | 25 | °C/W |
| On-Resistance (RDS(ON)) at VGS = -10V, ID = -3.0A | 150 mΩ | mΩ |
| On-Resistance (RDS(ON)) at VGS = -4.5V, ID = -1.6A | 240 mΩ | mΩ |
| Total Gate Charge (Qg) | 16 - 22 nC | nC |
Key Features
- High performance trench technology for extremely low RDS(ON)
- Low gate charge and fast switching speed
- High power and current handling capability
- Pb-free and halide-free
- Rugged gate design for reliability
- Optimized for power management applications with a wide range of gate drive voltage ratings (4.5V – 20V)
Applications
- Power management
- Load switch
- Battery protection
Q & A
- What is the maximum drain-source voltage of the NDS9407 MOSFET?
The maximum drain-source voltage (VDSS) is -60V.
- What is the continuous drain current rating of the NDS9407?
The continuous drain current (ID) is -3.0A.
- What is the typical on-resistance of the NDS9407 at VGS = -10V and ID = -3.0A?
The typical on-resistance (RDS(ON)) is 150 mΩ at VGS = -10V and ID = -3.0A.
- What are the thermal resistance values for the NDS9407?
The thermal resistance, junction-to-ambient (RθJA), is 50°C/W (Note 1a) and 125°C/W (Note 1c), and the thermal resistance, junction-to-case (RθJC), is 25°C/W.
- What are the typical applications of the NDS9407 MOSFET?
The NDS9407 is typically used in power management, load switch, and battery protection applications.
- What is the gate-source voltage range for the NDS9407?
The gate-source voltage (VGSS) range is ±20V.
- What is the maximum power dissipation of the NDS9407?
The maximum power dissipation (PD) is 2.5W (Note 1a), 1.2W (Note 1b), and 1.0W (Note 1c).
- What is the operating and storage junction temperature range for the NDS9407?
The operating and storage junction temperature range (TJ, TSTG) is -55 to +175°C.
- Is the NDS9407 Pb-free and halide-free?
- What is the typical turn-on delay time of the NDS9407?
The typical turn-on delay time (td(on)) is 8-16 ns.
- What is the total gate charge of the NDS9407?
The total gate charge (Qg) is 16-22 nC.
