Overview
The NDS355AN is an N-Channel logic level enhancement mode power field effect transistor produced by onsemi. This device is fabricated using onsemi's proprietary high cell density DMOS technology, which is tailored to minimize on-state resistance. The NDS355AN is particularly suited for low voltage applications where fast switching and low in-line power loss are critical.
It features a compact industry standard SOT-23 surface mount package, utilizing the SuperSOT™-3 design for superior thermal and electrical capabilities. This makes it ideal for use in battery-powered circuits such as notebook computers, portable phones, and PCMCIA cards.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Polarity | N-Channel | |
| VDSS (Max) | 30 | V |
| ID (Max) | 1.7 | A |
| RDS(ON) Max @ VGS = 10 V | 85 | mΩ |
| RDS(ON) Max @ VGS = 4.5 V | 125 | mΩ |
| VGS(th) Max | 2 | V |
| VGS Max | 20 | V |
| Package Type | SOT-23-3 |
Key Features
- High density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
- Compact industry standard SOT-23 surface mount package using proprietary SuperSOT™-3 design for superior thermal and electrical capabilities
- Suitable for low voltage applications requiring fast switching and low in-line power loss
- Logic level enhancement mode operation
Applications
- Notebook computers
- Portable phones
- PCMCIA cards
- Other battery-powered circuits where fast switching and low power loss are essential
Q & A
- What is the maximum drain-source voltage (VDSS) of the NDS355AN?
The maximum drain-source voltage (VDSS) of the NDS355AN is 30 V.
- What is the maximum drain current (ID) of the NDS355AN?
The maximum drain current (ID) of the NDS355AN is 1.7 A.
- What is the typical on-state resistance (RDS(ON)) at VGS = 10 V?
The typical on-state resistance (RDS(ON)) at VGS = 10 V is 85 mΩ.
- What package type is used for the NDS355AN?
The NDS355AN uses a SOT-23-3 surface mount package.
- What are some typical applications for the NDS355AN?
The NDS355AN is typically used in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits.
- What technology is used to fabricate the NDS355AN?
The NDS355AN is fabricated using onsemi's proprietary high cell density DMOS technology.
- What is the maximum gate-source voltage (VGS) for the NDS355AN?
The maximum gate-source voltage (VGS) for the NDS355AN is 20 V.
- What is the threshold voltage (VGS(th)) for the NDS355AN?
The threshold voltage (VGS(th)) for the NDS355AN is up to 2 V.
- Is the NDS355AN still in production?
No, the NDS355AN is obsolete and no longer manufactured.
- What are some available substitutes for the NDS355AN?
Available substitutes include the NTR4503NT1G from onsemi.
