Overview
The NDS355AN is an N-Channel, logic level, enhancement mode power field effect transistor produced by onsemi. It utilizes onsemi’s proprietary high cell density DMOS technology, which is designed to minimize on-state resistance. This transistor is particularly suited for low voltage applications in devices such as notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits where fast switching and low in-line power loss are critical.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDSS (Drain-Source Voltage) | - | - | 40 | V | |
| VGSS (Gate-Source Voltage - Continuous) | - | - | ±20 | V | |
| ID (Maximum Drain Current - Continuous) | - | - | 1.7 | A | |
| ID (Maximum Drain Current - Pulsed) | - | - | 10 | A | |
| PD (Power Dissipation) | - | - | 0.5 | W | |
| TJ, TSTG (Operating and Storage Junction Temperature Range) | - | - | -55 to +150 | °C | |
| RDS(on) (Static Drain-Source On-Resistance) @ VGS = 4.5 V, ID = 1.7 A | - | 0.105 | 0.125 | Ω | |
| RDS(on) (Static Drain-Source On-Resistance) @ VGS = 10 V, ID = 1.9 A | - | 0.065 | 0.085 | Ω | |
| VGS(th) (Gate Threshold Voltage) | VDS = VGS, ID = 250 μA | 1 | 1.6 | 2 | V |
| Ciss (Input Capacitance) | VDS = 15 V, VGS = 0 V, f = 1.0 MHz | - | 195 | - | pF |
| Coss (Output Capacitance) | - | - | 135 | pF | |
| Crss (Reverse Transfer Capacitance) | - | - | 48 | pF |
Key Features
- High cell density DMOS technology for extremely low RDS(on)
- Industry standard SOT-23 surface mount package using proprietary SUPERSOT-3 design for superior thermal and electrical capabilities
- Maximum drain current of 1.7 A and drain-source voltage of 40 V
- Low on-state resistance: RDS(on) = 0.125 Ω @ VGS = 4.5 V, and RDS(on) = 0.085 Ω @ VGS = 10 V
- Pb-Free device
- Fast switching and low in-line power loss, making it suitable for battery-powered circuits
Applications
The NDS355AN is particularly suited for low voltage applications in:
- Notebook computers
- Portable phones
- PCMCIA cards
- Other battery-powered circuits where fast switching and low power loss are critical
Q & A
- What is the maximum drain current of the NDS355AN?
The maximum continuous drain current is 1.7 A, and the maximum pulsed drain current is 10 A.
- What is the typical on-state resistance of the NDS355AN?
The typical on-state resistance (RDS(on)) is 0.105 Ω @ VGS = 4.5 V and 0.065 Ω @ VGS = 10 V.
- What is the gate threshold voltage range of the NDS355AN?
The gate threshold voltage (VGS(th)) ranges from 1 V to 2 V.
- What is the maximum operating junction temperature of the NDS355AN?
The maximum operating junction temperature is 150°C.
- Is the NDS355AN a Pb-Free device?
- What package type does the NDS355AN use?
The NDS355AN uses an industry standard SOT-23 surface mount package with onsemi’s proprietary SUPERSOT-3 design.
- What are the typical applications for the NDS355AN?
The NDS355AN is typically used in notebook computers, portable phones, PCMCIA cards, and other battery-powered circuits.
- What is the input capacitance of the NDS355AN?
The input capacitance (Ciss) is typically 195 pF at VDS = 15 V, VGS = 0 V, and f = 1.0 MHz.
- What is the turn-on delay time of the NDS355AN?
The turn-on delay time (td(on)) is typically 10 ns to 20 ns.
- What is the total gate charge of the NDS355AN?
The total gate charge (Qg) is typically 3.5 nC to 5 nC.
