Overview
The NDS351AN is an N-Channel Logic Level PowerTrench® MOSFET produced by onsemi. This device is designed for high-speed switching applications and is particularly suited for low voltage applications in battery-powered circuits, such as notebook computers, portable phones, and PCMCIA cards. The NDS351AN utilizes onsemi’s advanced PowerTrench process, which minimizes on-state resistance while maintaining superior switching performance.
Key Specifications
| Parameter | Rating | Units |
|---|---|---|
| Drain-Source Voltage (VDSS) | 30 | V |
| Gate-Source Voltage (VGSS) | ±20 | V |
| Continuous Drain Current (ID) | 1.4 | A |
| Pulsed Drain Current (ID) | 10 | A |
| Maximum Power Dissipation (PD) | 0.5 | W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 250 | °C/W |
| Thermal Resistance, Junction-to-Case (RθJC) | 75 | °C/W |
| Gate Threshold Voltage (VGS(th)) | 0.8 to 3 | V |
| Static Drain-Source On-Resistance (RDS(ON)) @ VGS = 10 V | 160 mΩ | mΩ |
| Static Drain-Source On-Resistance (RDS(ON)) @ VGS = 4.5 V | 250 mΩ | mΩ |
| Total Gate Charge (Qg) | 1.3 nC @ VGS = 4.5 V | nC |
Key Features
- Low On-Resistance: The NDS351AN features low on-resistance (RDS(ON) = 160 mΩ @ VGS = 10 V and RDS(ON) = 250 mΩ @ VGS = 4.5 V) for efficient power handling.
- High Current Handling: It has a high current handling capability with a continuous drain current of 1.4 A and a pulsed drain current of 10 A.
- Fast Switching Speed: The device offers high-speed switching performance, making it suitable for applications requiring rapid transitions.
- Ultra-Low Gate Charge: The NDS351AN has an ultra-low gate charge, which enhances its switching efficiency.
- Industry Standard Package: It is available in an industry standard SOT-23 surface mount package using the proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.
Applications
- Power Management Systems: The NDS351AN is used in power management systems for efficient power handling.
- Motor Control: It is ideal for motor control applications requiring high-speed switching.
- LED Lighting: The device can be utilized in LED lighting systems for controlling current flow.
- Battery-Powered Circuits: It is particularly suited for low voltage applications in battery-powered circuits such as notebook computers, portable phones, and PCMCIA cards.
Q & A
- What is the maximum drain-source voltage of the NDS351AN?
The maximum drain-source voltage (VDSS) is 30 V.
- What is the continuous drain current rating of the NDS351AN?
The continuous drain current (ID) is 1.4 A.
- What is the gate threshold voltage range of the NDS351AN?
The gate threshold voltage (VGS(th)) ranges from 0.8 V to 3 V.
- What is the typical on-resistance of the NDS351AN at VGS = 10 V?
The typical on-resistance (RDS(ON)) at VGS = 10 V is 160 mΩ.
- What is the maximum power dissipation of the NDS351AN?
The maximum power dissipation (PD) is 0.5 W.
- What is the thermal resistance, junction-to-ambient (RθJA) of the NDS351AN?
The thermal resistance, junction-to-ambient (RθJA) is 250 °C/W.
- In what package is the NDS351AN available?
The NDS351AN is available in an industry standard SOT-23 surface mount package using the proprietary SuperSOTTM-3 design.
- What are some common applications of the NDS351AN?
Common applications include power management systems, motor control, LED lighting, and battery-powered circuits such as notebook computers and portable phones.
- What is the total gate charge of the NDS351AN at VGS = 4.5 V?
The total gate charge (Qg) at VGS = 4.5 V is 1.3 nC.
- What is the operating and storage junction temperature range of the NDS351AN?
The operating and storage junction temperature range (TJ, TSTG) is -55 °C to +150 °C.
