NDS0610-PG
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onsemi NDS0610-PG

Manufacturer No:
NDS0610-PG
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDS0610-PG is a P-Channel Enhancement Mode Field Effect Transistor (FET) produced by onsemi. This transistor is fabricated using onsemi's proprietary, high cell density DMOS technology, which is designed to provide minimal on-state resistance, rugged and reliable performance, and fast switching capabilities. The NDS0610-PG is well-suited for a variety of applications requiring high efficiency and reliability.

Key Specifications

Product AttributeAttribute Value
Transistor Type1 P-Channel
Typical Turn-Off Delay Time10 ns
Typical Turn-On Delay Time2.5 ns
Width1.3 mm
Drain-Source Voltage (Vds)60 V

Key Features

  • High cell density DMOS technology for minimal on-state resistance.
  • Rugged and reliable performance.
  • Fast switching capabilities with typical turn-on and turn-off delay times of 2.5 ns and 10 ns, respectively.
  • Enhancement mode operation.
  • Compact package size with a width of 1.3 mm.

Applications

The NDS0610-PG is suitable for various applications including but not limited to:

  • Power management circuits.
  • Switching power supplies.
  • Motor control and drive circuits.
  • Audio and video switching.
  • General-purpose switching applications where high efficiency and reliability are required.

Q & A

  1. What is the transistor type of the NDS0610-PG?
    The NDS0610-PG is a P-Channel Enhancement Mode Field Effect Transistor.
  2. What is the typical turn-on delay time of the NDS0610-PG?
    The typical turn-on delay time is 2.5 ns.
  3. What is the typical turn-off delay time of the NDS0610-PG?
    The typical turn-off delay time is 10 ns.
  4. What is the maximum drain-source voltage (Vds) of the NDS0610-PG?
    The maximum drain-source voltage (Vds) is 60 V.
  5. What technology is used to fabricate the NDS0610-PG?
    The NDS0610-PG is fabricated using onsemi's proprietary high cell density DMOS technology.
  6. What are some common applications of the NDS0610-PG?
    Common applications include power management circuits, switching power supplies, motor control and drive circuits, and general-purpose switching.
  7. What is the width of the NDS0610-PG package?
    The width of the package is 1.3 mm.
  8. Is the NDS0610-PG suitable for high-efficiency applications?
    Yes, the NDS0610-PG is designed to provide high efficiency and reliability.
  9. Where can I find detailed specifications for the NDS0610-PG?
    Detailed specifications can be found in the datasheet available on onsemi's official website or through distributors like Mouser and Digi-Key.
  10. What is the enhancement mode operation of the NDS0610-PG?
    The NDS0610-PG operates in enhancement mode, meaning it is normally off and requires a gate-source voltage to turn on.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:2.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:79 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3 (TO-236)
Package / Case:TO-236-3, SC-59, SOT-23-3
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