Overview
The NDS0610 is a P-Channel Enhancement Mode Field Effect Transistor (FET) produced by onsemi using their proprietary high cell density DMOS technology. This transistor is designed to minimize on-state resistance, provide rugged and reliable performance, and ensure fast switching. It is particularly suited for low voltage applications that require a low current high side switch, capable of handling up to 120 mA DC and delivering current up to 1 A.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | -60 | V |
| Gate-Source Voltage (VGSS) | ±20 | V |
| Continuous Drain Current (ID) | -0.12 | A |
| Pulsed Drain Current (ID) | -1 | A |
| Maximum Power Dissipation (PD) | 0.36 | W |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 350 | °C/W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | -55 to +150 | °C |
| Maximum Lead Temperature for Soldering (TL) | 300 | °C |
| Gate Threshold Voltage (VGS(th)) | -1 to -3.5 | V |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = -10 V | 1.0 to 1.7 Ω | Ω |
| Static Drain-Source On-Resistance (RDS(on)) at VGS = -4.5 V | 10 to 20 Ω | Ω |
Key Features
- Voltage controlled P-Channel small signal switch
- High density cell design for low RDS(on)
- High saturation current
- Capable of handling up to 120 mA DC and delivering current up to 1 A
- Rugged and reliable performance with fast switching
Applications
The NDS0610 is particularly suited for low voltage applications requiring a low current high side switch. It can be used in various applications such as:
- Low voltage power management
- High side switching in automotive and industrial systems
- Portable electronics and battery-powered devices
- General purpose switching and amplification
Q & A
- What is the maximum drain-source voltage (VDSS) of the NDS0610?
The maximum drain-source voltage (VDSS) is -60 V.
- What is the continuous drain current (ID) rating of the NDS0610?
The continuous drain current (ID) rating is -0.12 A.
- What is the maximum power dissipation (PD) of the NDS0610?
The maximum power dissipation (PD) is 0.36 W.
- What is the thermal resistance, junction-to-ambient (RθJA), of the NDS0610?
The thermal resistance, junction-to-ambient (RθJA), is 350 °C/W.
- What is the gate threshold voltage (VGS(th)) range of the NDS0610?
The gate threshold voltage (VGS(th)) range is -1 to -3.5 V.
- What are the typical on-resistance values (RDS(on)) at different gate-source voltages?
The typical on-resistance values are 1.0 to 1.7 Ω at VGS = -10 V and 10 to 20 Ω at VGS = -4.5 V.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 300 °C.
- What is the operating and storage junction temperature range (TJ, TSTG) of the NDS0610?
The operating and storage junction temperature range is -55 to +150 °C.
- What are some common applications for the NDS0610?
Common applications include low voltage power management, high side switching in automotive and industrial systems, portable electronics, and general purpose switching and amplification.
- What is the package type of the NDS0610?
The NDS0610 is available in the SOT-23 package.
