NDD04N60ZT4G
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onsemi NDD04N60ZT4G

Manufacturer No:
NDD04N60ZT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 600V 4.1A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NDD04N60ZT4G is a high-performance N-Channel Power MOSFET produced by onsemi. This device is designed to offer low ON resistance, low gate charge, and high reliability, making it suitable for a variety of power management applications. The MOSFET is available in the DPAK package and is Pb-free, halogen-free, and RoHS compliant.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 600 V
Continuous Drain Current ID 4.1 A
Pulsed Drain Current IDM 20 A
Power Dissipation PD 83 W
Gate-to-Source Voltage VGS ±30 V
Static Drain-to-Source On-Resistance RDS(on) 1.8 - 2.0 Ω
Gate Threshold Voltage VGS(th) 3.0 - 4.5 V
Junction-to-Case Thermal Resistance RθJC 1.5 °C/W
Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C

Key Features

  • Low ON Resistance: Ensures minimal power loss during operation.
  • Low Gate Charge: Reduces the energy required to switch the MOSFET on and off.
  • ESD Diode-Protected Gate: Enhances the device's robustness against electrostatic discharge.
  • 100% Avalanche Tested: Guarantees the device's reliability under high-stress conditions.
  • Pb-free, Halogen-free, and RoHS Compliant: Meets environmental and safety standards.

Applications

The NDD04N60ZT4G is suitable for various power management applications, including:

  • Power Supplies: DC-DC converters, AC-DC converters, and switch-mode power supplies.
  • Motor Control: Inverter circuits for motor drives and control systems.
  • Industrial Automation: High-power switching in industrial automation systems.
  • Automotive Systems: Power management in automotive electronics.
  • Consumer Electronics: High-efficiency power management in consumer devices.

Q & A

  1. What is the maximum drain-to-source voltage of the NDD04N60ZT4G?

    The maximum drain-to-source voltage is 600 V.

  2. What is the continuous drain current rating of the NDD04N60ZT4G?

    The continuous drain current rating is 4.1 A.

  3. What is the typical on-resistance of the NDD04N60ZT4G?

    The typical on-resistance is between 1.8 and 2.0 Ω.

  4. Is the NDD04N60ZT4G Pb-free and RoHS compliant?

    Yes, the device is Pb-free, halogen-free, and RoHS compliant.

  5. What is the junction-to-case thermal resistance of the NDD04N60ZT4G?

    The junction-to-case thermal resistance is 1.5 °C/W.

  6. What are the typical applications of the NDD04N60ZT4G?

    Typical applications include power supplies, motor control, industrial automation, automotive systems, and consumer electronics.

  7. What is the gate threshold voltage range of the NDD04N60ZT4G?

    The gate threshold voltage range is between 3.0 and 4.5 V.

  8. Does the NDD04N60ZT4G have ESD protection?

    Yes, the device has ESD diode-protected gates.

  9. What is the maximum operating junction temperature of the NDD04N60ZT4G?

    The maximum operating junction temperature is 150 °C.

  10. Is the NDD04N60ZT4G 100% avalanche tested?

    Yes, the device is 100% avalanche tested.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:29 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:640 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
NDF04N60ZG
NDF04N60ZG
MOSFET N-CH 600V 4.8A TO220FP
NDF04N60ZH
NDF04N60ZH
MOSFET N-CH 600V 4.8A TO220FP
NDD04N60ZT4G
NDD04N60ZT4G
MOSFET N-CH 600V 4.1A DPAK

Similar Products

Part Number NDD04N60ZT4G NDD02N60ZT4G NDD03N60ZT4G NDD04N50ZT4G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 500 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc) 2.2A (Tc) 2.6A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V 4.8Ohm @ 1A, 10V 3.6Ohm @ 1.2A, 10V 2.7Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 29 nC @ 10 V 16 nC @ 10 V 12 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V 325 pF @ 25 V 312 pF @ 25 V 308 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 83W (Tc) 57W (Tc) 61W (Tc) 61W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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