Overview
The MTD6N20ET5G is a 6 A, 200 V, N-Channel Power MOSFET produced by onsemi. This advanced device is designed to withstand high energy in both avalanche and commutation modes, making it suitable for high-speed switching applications. It features a drain-to-source diode with a fast recovery time, which is particularly beneficial in bridge circuits where diode speed and commutating safe operating areas are critical. The MOSFET is also Pb-free and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 200 | Vdc |
| Drain-to-Gate Voltage | VDGR | 200 | Vdc |
| Gate-to-Source Voltage (Continuous) | VGS | ±20 | Vdc |
| Gate-to-Source Voltage (Non-repetitive, tp ≤ 10 ms) | VGSM | ±40 | Vpk |
| Drain Current (Continuous) | ID | 6.0 | Adc |
| Drain Current (Continuous @ 100°C) | ID | 3.8 | Adc |
| Drain Current (Single Pulse, tp ≤ 10 μs) | IDM | 18 | Apk |
| Total Power Dissipation @ TA = 25°C | PD | 50 | W |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to 150 | °C |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 54 | mJ |
| Thermal Resistance - Junction-to-Case | RθJC | 2.50 | °C/W |
| Thermal Resistance - Junction-to-Ambient | RθJA | 100 | °C/W |
| Maximum Temperature for Soldering Purposes | TL | 260 | °C |
| Static Drain-Source On-Resistance (VGS = 10 Vdc, ID = 3.0 Adc) | RDS(on) | 0.46 - 0.700 | Ohm |
Key Features
- Avalanche Energy Specified: The device is designed to handle high energy in avalanche and commutation modes.
- Source-to-Drain Diode Recovery Time: Comparable to a discrete fast recovery diode, enhancing performance in bridge circuits.
- Diode Characterized for Use in Bridge Circuits: Ensures optimal performance and safety margin against voltage transients.
- IDSS and VDS(on) Specified at Elevated Temperature: Provides reliable operation under various temperature conditions.
- Pb-Free and RoHS Compliant: Environmentally friendly packaging.
Applications
The MTD6N20ET5G is particularly well-suited for low voltage, high-speed switching applications in:
- Power Supplies
- Converters
- PWM Motor Controls
- Bridge Circuits: Where diode speed and commutating safe operating areas are critical.
Q & A
- What is the maximum drain-to-source voltage of the MTD6N20ET5G?
The maximum drain-to-source voltage is 200 Vdc. - What is the continuous drain current rating at 25°C?
The continuous drain current rating is 6.0 Adc. - What is the single pulse drain current rating?
The single pulse drain current rating is 18 Apk. - What is the thermal resistance from junction to case?
The thermal resistance from junction to case is 2.50 °C/W. - Is the MTD6N20ET5G Pb-free and RoHS compliant?
Yes, the device is Pb-free and RoHS compliant. - What is the maximum temperature for soldering purposes?
The maximum temperature for soldering purposes is 260 °C. - What are the typical applications of the MTD6N20ET5G?
The device is used in power supplies, converters, PWM motor controls, and bridge circuits. - What is the static drain-source on-resistance?
The static drain-source on-resistance is 0.46 - 0.700 Ohm at VGS = 10 Vdc and ID = 3.0 Adc. - How does the device handle avalanche energy?
The device is designed to handle high energy in avalanche and commutation modes, with a specified single pulse drain-to-source avalanche energy of 54 mJ. - What is the operating and storage temperature range of the MTD6N20ET5G?
The operating and storage temperature range is −55 to 150 °C.
